Detailed Information on Publication Record
2022
Growth-rate model of epitaxial layer-by-layer growth by pulsed-laser deposition
GABRIEL, Vít, Pavel KOCÁN and Václav HOLÝBasic information
Original name
Growth-rate model of epitaxial layer-by-layer growth by pulsed-laser deposition
Authors
GABRIEL, Vít (guarantor), Pavel KOCÁN and Václav HOLÝ (203 Czech Republic, belonging to the institution)
Edition
Physical Review E, American Physical Society, 2022, 2470-0045
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 2.400
RIV identification code
RIV/00216224:14310/22:00128099
Organization unit
Faculty of Science
UT WoS
000874981300004
Keywords in English
Growth; Nucleation on surfaces; Thin films; Mean-field and cluster methods
Tags
Tags
International impact, Reviewed
Změněno: 18/1/2023 14:10, Mgr. Marie Šípková, DiS.
Abstract
V originále
We present a numerical model of epitaxial thin-film growth applicable for pulsed-laser deposition on a single crystalline substrate. The model is based on rate equations describing the time development of monolayer coverages and of densities of movable particles on atomically flat terraces. Numerical solution of the equations showed that the time dependence of surface roughness obeys a scaling law, the exponent of which depends on probabilities of various atomistic processes included in the simulation model. From the time dependence of monolayer coverages we calculated x-ray diffracted intensity in a quasiforbidden anti-Bragg reflection and showed that its oscillatory behavior is affected by these probabilities as well. The results show the possibility to study atomistic processes during the deposition from the time dependence of the anti-Bragg intensity measured during deposition.