YUAN, Xueyong, Saimon F. Covre da SILVA, Diana CSONTOSOVÁ, Huiying HUANG, Christian SCHIMPF, Marcus REINDL, Junpeng LU, Zhenhua NI, Armando RASTELLI and Petr KLENOVSKÝ. GaAs quantum dots under quasiuniaxial stress: Experiment and theory. Physical Review B. American Physical Society, 2023, vol. 107, No 23, p. "235412-1"-"235412-12", 12 pp. ISSN 2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.107.235412.
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Basic information
Original name GaAs quantum dots under quasiuniaxial stress: Experiment and theory
Authors YUAN, Xueyong (guarantor), Saimon F. Covre da SILVA, Diana CSONTOSOVÁ (703 Slovakia, belonging to the institution), Huiying HUANG, Christian SCHIMPF, Marcus REINDL, Junpeng LU, Zhenhua NI, Armando RASTELLI and Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution).
Edition Physical Review B, American Physical Society, 2023, 2469-9950.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 3.700 in 2022
RIV identification code RIV/00216224:14310/23:00130993
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1103/PhysRevB.107.235412
UT WoS 001134290100006
Keywords in English Elasticity; Electronic structure; Excitons; Fermions; Lifetimes and widths; Luminescence; Nonlocality; Quantum cryptography; Stress
Tags rivok
Tags International impact, Reviewed
Changed by Changed by: Mgr. Marie Šípková, DiS., učo 437722. Changed: 19/3/2024 14:48.
Abstract
The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k⋅p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.
Links
8C18001, research and development projectName: CMOS Compatible Single Photon Sources based on SiGe Quantum Dots (Acronym: CUSPIDOR)
Investor: Ministry of Education, Youth and Sports of the CR, QUANTERA
PrintDisplayed: 7/9/2024 19:07