GaAs quantum dots under quasiuniaxial stress: Experiment and
theory

J 2023

GaAs quantum dots under quasiuniaxial stress: Experiment and theory

YUAN, Xueyong, Saimon F. Covre da SILVA, Diana CSONTOSOVÁ, Huiying HUANG, Christian SCHIMPF et. al.

Basic information

Original name

GaAs quantum dots under quasiuniaxial stress: Experiment and theory

Authors

YUAN, Xueyong (guarantor), Saimon F. Covre da SILVA, Diana CSONTOSOVÁ (703 Slovakia, belonging to the institution), Huiying HUANG, Christian SCHIMPF, Marcus REINDL, Junpeng LU, Zhenhua NI, Armando RASTELLI and Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution)

Edition

Physical Review B, American Physical Society, 2023, 2469-9950

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 3.700 in 2022

RIV identification code

RIV/00216224:14310/23:00130993

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1103/PhysRevB.107.235412

UT WoS

001134290100006

Keywords in English

Elasticity; Electronic structure; Excitons; Fermions; Lifetimes and widths; Luminescence; Nonlocality; Quantum cryptography; Stress

Abstract

V originále

The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k⋅p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.

Links

8C18001, research and development project

Name: CMOS Compatible Single Photon Sources based on SiGe Quantum Dots (Acronym: CUSPIDOR)

Investor: Ministry of Education, Youth and Sports of the CR, QUANTERA

Citovat

YUAN, Xueyong, Saimon F. Covre da SILVA, Diana CSONTOSOVÁ, Huiying HUANG, Christian SCHIMPF, Marcus REINDL, Junpeng LU, Zhenhua NI, Armando RASTELLI and Petr KLENOVSKÝ. GaAs quantum dots under quasiuniaxial stress: Experiment and theory. Physical Review B. American Physical Society, 2023, vol. 107, No 23, p. "235412-1"-"235412-12", 12 pp. ISSN 2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.107.235412.

@article{2292538,
   author = {Yuan, Xueyong and Silva, Saimon F. Covre da and Csontosová, Diana and Huang, Huiying and Schimpf, Christian and Reindl, Marcus and Lu, Junpeng and Ni, Zhenhua and Rastelli, Armando and Klenovský, Petr},
   article_number = {23},
   doi = {http://dx.doi.org/10.1103/PhysRevB.107.235412},
   keywords = {Elasticity; Electronic structure; Excitons; Fermions; Lifetimes and widths; Luminescence; Nonlocality; Quantum cryptography; Stress},
   language = {eng},
   issn = {2469-9950},
   journal = {Physical Review B},
   title = {GaAs quantum dots under quasiuniaxial stress: Experiment and theory},
   url = {https://doi.org/10.1103/PhysRevB.107.235412},
   volume = {107},
   year = {2023}
}

TY  - JOUR
ID  - 2292538
AU  - Yuan, Xueyong - Silva, Saimon F. Covre da - Csontosová, Diana - Huang, Huiying - Schimpf, Christian - Reindl, Marcus - Lu, Junpeng - Ni, Zhenhua - Rastelli, Armando - Klenovský, Petr
PY  - 2023
TI  - GaAs quantum dots under quasiuniaxial stress: Experiment and theory
JF  - Physical Review B
VL  - 107
IS  - 23
SP  - "235412-1"-"235412-12"
EP  - "235412-1"-"235412-12"
PB  - American Physical Society
SN  - 24699950
KW  - Elasticity
KW  - Electronic structure
KW  - Excitons
KW  - Fermions
KW  - Lifetimes and widths
KW  - Luminescence
KW  - Nonlocality
KW  - Quantum cryptography
KW  - Stress
UR  - https://doi.org/10.1103/PhysRevB.107.235412
N2  - The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k⋅p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.
ER  -

YUAN, Xueyong, Saimon F. Covre da SILVA, Diana CSONTOSOVÁ, Huiying HUANG, Christian SCHIMPF, Marcus REINDL, Junpeng LU, Zhenhua NI, Armando RASTELLI and Petr KLENOVSKÝ. GaAs quantum dots under quasiuniaxial stress: Experiment and theory. \textit{Physical Review B}. American Physical Society, 2023, vol.~107, No~23, p.~''235412-1''-''235412-12'', 12 pp. ISSN~2469-9950. Available from: https://dx.doi.org/10.1103/PhysRevB.107.235412.

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