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@article{2349297,
author = {Sala, Elisa Maddalena and Klenovský, Petr},
article_number = {11},
doi = {http://dx.doi.org/10.1088/1367-2630/ad0856},
keywords = {quantum dot; nanomemory; electronic structure; k.p approximation; antimonides},
language = {eng},
issn = {1367-2630},
journal = {New Journal of Physics},
title = {Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications},
url = {https://iopscience.iop.org/article/10.1088/1367-2630/ad0856},
volume = {25},
year = {2023}
}
TY - JOUR
ID - 2349297
AU - Sala, Elisa Maddalena - Klenovský, Petr
PY - 2023
TI - Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications
JF - New Journal of Physics
VL - 25
IS - 11
SP - 113012
EP - 113012
PB - IOP Publishing Ltd
SN - 13672630
KW - quantum dot
KW - nanomemory
KW - electronic structure
KW - k.p approximation
KW - antimonides
UR - https://iopscience.iop.org/article/10.1088/1367-2630/ad0856
N2 - We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to∼ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p.
ER -
SALA, Elisa Maddalena and Petr KLENOVSKÝ. Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. \textit{New Journal of Physics}. IOP Publishing Ltd, 2023, vol.~25, No~11, p.~113012-113028. ISSN~1367-2630. Available from: https://dx.doi.org/10.1088/1367-2630/ad0856.
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