Anomalous luminescence temperature dependence of (In, Ga)(As,
Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping
layer for nanomemory applications

J 2023

Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

SALA, Elisa Maddalena and Petr KLENOVSKÝ

Basic information

Original name

Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Authors

SALA, Elisa Maddalena (380 Italy) and Petr KLENOVSKÝ (203 Czech Republic, guarantor, belonging to the institution)

Edition

New Journal of Physics, IOP Publishing Ltd, 2023, 1367-2630

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United Kingdom of Great Britain and Northern Ireland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

Odkaz na text vysledku

Impact factor

Impact factor: 3.300 in 2022

RIV identification code

RIV/00216224:14310/23:00132512

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1088/1367-2630/ad0856

UT WoS

001104262700001

Keywords in English

quantum dot; nanomemory; electronic structure; k.p approximation; antimonides

Abstract

V originále

We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to∼ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p.

Links

EH22_008/0004572, research and development project

Name: Kvantové materiály pro aplikace v udržitelných technologiích

MUNI/A/1628/2023, interní kód MU

Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů 2024

Investor: Masaryk University

Citovat

SALA, Elisa Maddalena and Petr KLENOVSKÝ. Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. New Journal of Physics. IOP Publishing Ltd, 2023, vol. 25, No 11, p. 113012-113028. ISSN 1367-2630. Available from: https://dx.doi.org/10.1088/1367-2630/ad0856.

@article{2349297,
   author = {Sala, Elisa Maddalena and Klenovský, Petr},
   article_number = {11},
   doi = {http://dx.doi.org/10.1088/1367-2630/ad0856},
   keywords = {quantum dot; nanomemory; electronic structure; k.p approximation; antimonides},
   language = {eng},
   issn = {1367-2630},
   journal = {New Journal of Physics},
   title = {Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications},
   url = {https://iopscience.iop.org/article/10.1088/1367-2630/ad0856},
   volume = {25},
   year = {2023}
}

TY  - JOUR
ID  - 2349297
AU  - Sala, Elisa Maddalena - Klenovský, Petr
PY  - 2023
TI  - Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications
JF  - New Journal of Physics
VL  - 25
IS  - 11
SP  - 113012
EP  - 113012
PB  - IOP Publishing Ltd
SN  - 13672630
KW  - quantum dot
KW  - nanomemory
KW  - electronic structure
KW  - k.p approximation
KW  - antimonides
UR  - https://iopscience.iop.org/article/10.1088/1367-2630/ad0856
N2  - We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to∼ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p.
ER  -

SALA, Elisa Maddalena and Petr KLENOVSKÝ. Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. \textit{New Journal of Physics}. IOP Publishing Ltd, 2023, vol.~25, No~11, p.~113012-113028. ISSN~1367-2630. Available from: https://dx.doi.org/10.1088/1367-2630/ad0856.

Detailed Information on Publication Record