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@article{2354857,
author = {Drevet, Richard Gaetan Paul and Souček, Pavel and Mareš, Pavel and Ondračka, Pavel and Dubau, Martin and Kolonits, Tamás and Czigány, Zsolt and Balázsi, Katalin and Vašina, Petr},
article_number = {March},
doi = {http://dx.doi.org/10.1016/j.vacuum.2023.112881},
keywords = {Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown},
language = {eng},
issn = {0042-207X},
journal = {Vacuum},
title = {Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications},
url = {https://doi.org/10.1016/j.vacuum.2023.112881},
volume = {221},
year = {2024}
}
TY - JOUR
ID - 2354857
AU - Drevet, Richard Gaetan Paul - Souček, Pavel - Mareš, Pavel - Ondračka, Pavel - Dubau, Martin - Kolonits, Tamás - Czigány, Zsolt - Balázsi, Katalin - Vašina, Petr
PY - 2024
TI - Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications
JF - Vacuum
VL - 221
IS - March
SP - 1-14
EP - 1-14
PB - Elsevier Ltd
SN - 0042207X
KW - Reactive magnetron sputtering
KW - Ternary oxide
KW - Aluminum
KW - Tantalum
KW - Dielectric strength
KW - Dielectric breakdown
UR - https://doi.org/10.1016/j.vacuum.2023.112881
N2 - This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.
ER -
DREVET, Richard Gaetan Paul, Pavel SOUČEK, Pavel MAREŠ, Pavel ONDRAČKA, Martin DUBAU, Tamás KOLONITS, Zsolt CZIGÁNY, Katalin BALÁZSI and Petr VAŠINA. Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications. \textit{Vacuum}. Elsevier Ltd, 2024, vol.~221, March, p.~1-14. ISSN~0042-207X. Available from: https://dx.doi.org/10.1016/j.vacuum.2023.112881.
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