Aluminum tantalum oxide thin films deposited at low temperature
by pulsed direct current reactive magnetron sputtering for
dielectric applications

J 2024

Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

DREVET, Richard Gaetan Paul, Pavel SOUČEK, Pavel MAREŠ, Pavel ONDRAČKA, Martin DUBAU et. al.

Basic information

Original name

Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

Authors

DREVET, Richard Gaetan Paul (250 France, guarantor, belonging to the institution), Pavel SOUČEK (203 Czech Republic, belonging to the institution), Pavel MAREŠ, Pavel ONDRAČKA (203 Czech Republic, belonging to the institution), Martin DUBAU, Tamás KOLONITS, Zsolt CZIGÁNY, Katalin BALÁZSI and Petr VAŠINA (203 Czech Republic, belonging to the institution)

Edition

Vacuum, Elsevier Ltd, 2024, 0042-207X

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

United Kingdom of Great Britain and Northern Ireland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 4.000 in 2022

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.vacuum.2023.112881

UT WoS

001138128000001

Keywords in English

Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown

Abstract

V originále

This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.

Links

FW06010462, research and development project

Name: Tenzometrické tenkovrstvé senzory s vysokou citlivostí a životností připravované pomocí magnetronové depozice

Investor: Technology Agency of the Czech Republic, Subprograms 1 Technology leaders

LM2023039, research and development project

Name: Centrum výzkumu a vývoje plazmatu a nanotechnologických povrchových úprav

Investor: Ministry of Education, Youth and Sports of the CR

90251, large research infrastructures

Name: CzechNanoLab II

Citovat

DREVET, Richard Gaetan Paul, Pavel SOUČEK, Pavel MAREŠ, Pavel ONDRAČKA, Martin DUBAU, Tamás KOLONITS, Zsolt CZIGÁNY, Katalin BALÁZSI and Petr VAŠINA. Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications. Vacuum. Elsevier Ltd, 2024, vol. 221, March, p. 1-14. ISSN 0042-207X. Available from: https://dx.doi.org/10.1016/j.vacuum.2023.112881.

@article{2354857,
   author = {Drevet, Richard Gaetan Paul and Souček, Pavel and Mareš, Pavel and Ondračka, Pavel and Dubau, Martin and Kolonits, Tamás and Czigány, Zsolt and Balázsi, Katalin and Vašina, Petr},
   article_number = {March},
   doi = {http://dx.doi.org/10.1016/j.vacuum.2023.112881},
   keywords = {Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown},
   language = {eng},
   issn = {0042-207X},
   journal = {Vacuum},
   title = {Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications},
   url = {https://doi.org/10.1016/j.vacuum.2023.112881},
   volume = {221},
   year = {2024}
}

TY  - JOUR
ID  - 2354857
AU  - Drevet, Richard Gaetan Paul - Souček, Pavel - Mareš, Pavel - Ondračka, Pavel - Dubau, Martin - Kolonits, Tamás - Czigány, Zsolt - Balázsi, Katalin - Vašina, Petr
PY  - 2024
TI  - Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications
JF  - Vacuum
VL  - 221
IS  - March
SP  - 1-14
EP  - 1-14
PB  - Elsevier Ltd
SN  - 0042207X
KW  - Reactive magnetron sputtering
KW  - Ternary oxide
KW  - Aluminum
KW  - Tantalum
KW  - Dielectric strength
KW  - Dielectric breakdown
UR  - https://doi.org/10.1016/j.vacuum.2023.112881
N2  - This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.
ER  -

DREVET, Richard Gaetan Paul, Pavel SOUČEK, Pavel MAREŠ, Pavel ONDRAČKA, Martin DUBAU, Tamás KOLONITS, Zsolt CZIGÁNY, Katalin BALÁZSI and Petr VAŠINA. Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications. \textit{Vacuum}. Elsevier Ltd, 2024, vol.~221, March, p.~1-14. ISSN~0042-207X. Available from: https://dx.doi.org/10.1016/j.vacuum.2023.112881.

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