Detailed Information on Publication Record
2024
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae
CECCHI, Stefano, Jamo MOMAND, Daniele DRAGONI, Abou El Kheir OMAR, Federico FAGIANI et. al.Basic information
Original name
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae
Authors
CECCHI, Stefano, Jamo MOMAND, Daniele DRAGONI, Abou El Kheir OMAR, Federico FAGIANI, Dominik KRIEGNER, Christian RINALDI, Fabrizio ARCIPRETE, Václav HOLÝ (203 Czech Republic, belonging to the institution), Bart J. KOOI, Marco BERNASCONI and Raffaella CALARCO
Edition
Advanced Science, Wiley, 2024, 2198-3844
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 15.100 in 2022
Organization unit
Faculty of Science
UT WoS
001108011600001
Keywords in English
2D ferroelectrics; van der Waals; molecular beam epitaxy; phase-change materials; density functional theory calculations
Tags
Tags
International impact, Reviewed
Změněno: 19/1/2024 10:36, Mgr. Marie Šípková, DiS.
Abstract
V originále
The possibility to engineer (GeTe)(m)(Sb2Te3)n phase-change materials to co-host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe)(m)(Sb2Te3)n with GeTe-rich composition is presented. These layered films feature a tunable distribution of (GeTe)m(Sb2Te3)(1) blocks of different sizes. Breakthrough evidence of ferroelectric displacement in thick (GeTe)m(Sb2Te3)(1) lamellae is provided. The density functional theory calculations suggest the formation of a tilted (GeTe)m slab sandwiched in GeTe-rich blocks. That is, the net ferroelectric polarization is confined almost in-plane, representing an unprecedented case between 2D and bulk ferroelectric materials. The ferroelectric behavior is confirmed by piezoresponse force microscopy and electroresistive measurements. The resilience of the quasi van der Waals character of the films, regardless of their composition, is also demonstrated. Hence, the material developed hereby gathers in a unique 2D platform the phase-change and ferroelectric switching properties, paving the way for the conception of innovative device architectures.