J 2024

Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae

CECCHI, Stefano, Jamo MOMAND, Daniele DRAGONI, Abou El Kheir OMAR, Federico FAGIANI et. al.

Basic information

Original name

Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae

Authors

CECCHI, Stefano, Jamo MOMAND, Daniele DRAGONI, Abou El Kheir OMAR, Federico FAGIANI, Dominik KRIEGNER, Christian RINALDI, Fabrizio ARCIPRETE, Václav HOLÝ (203 Czech Republic, belonging to the institution), Bart J. KOOI, Marco BERNASCONI and Raffaella CALARCO

Edition

Advanced Science, Wiley, 2024, 2198-3844

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

Impact factor

Impact factor: 15.100 in 2022

Organization unit

Faculty of Science

UT WoS

001108011600001

Keywords in English

2D ferroelectrics; van der Waals; molecular beam epitaxy; phase-change materials; density functional theory calculations

Tags

Tags

International impact, Reviewed
Změněno: 19/1/2024 10:36, Mgr. Marie Šípková, DiS.

Abstract

V originále

The possibility to engineer (GeTe)(m)(Sb2Te3)n phase-change materials to co-host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe)(m)(Sb2Te3)n with GeTe-rich composition is presented. These layered films feature a tunable distribution of (GeTe)m(Sb2Te3)(1) blocks of different sizes. Breakthrough evidence of ferroelectric displacement in thick (GeTe)m(Sb2Te3)(1) lamellae is provided. The density functional theory calculations suggest the formation of a tilted (GeTe)m slab sandwiched in GeTe-rich blocks. That is, the net ferroelectric polarization is confined almost in-plane, representing an unprecedented case between 2D and bulk ferroelectric materials. The ferroelectric behavior is confirmed by piezoresponse force microscopy and electroresistive measurements. The resilience of the quasi van der Waals character of the films, regardless of their composition, is also demonstrated. Hence, the material developed hereby gathers in a unique 2D platform the phase-change and ferroelectric switching properties, paving the way for the conception of innovative device architectures.