KRIZMAN, Gauthier, Tetiana ZAKUSYLO, Lakshmi SAJEEV, Mahdi HAJLAOUI, Takuya TAKASHIRO, Marcin ROSMUS, Natalia OLSZOWSKA, Jacek J. KOŁODZIEJ, Günther BAUER, Ondřej CAHA and Gunther SPRINGHOLZ. A Novel Ferroelectric Rashba Semiconductor. Advanced Materials. Wiley-VCH GmbH, 2024, vol. 36, No 13, p. 1-12. ISSN 0935-9648. Available from: https://dx.doi.org/10.1002/adma.202310278.
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Basic information
Original name A Novel Ferroelectric Rashba Semiconductor
Authors KRIZMAN, Gauthier (guarantor), Tetiana ZAKUSYLO, Lakshmi SAJEEV (356 India, belonging to the institution), Mahdi HAJLAOUI, Takuya TAKASHIRO, Marcin ROSMUS, Natalia OLSZOWSKA, Jacek J. KOŁODZIEJ, Günther BAUER, Ondřej CAHA (203 Czech Republic, belonging to the institution) and Gunther SPRINGHOLZ.
Edition Advanced Materials, Wiley-VCH GmbH, 2024, 0935-9648.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Germany
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 29.400 in 2022
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1002/adma.202310278
UT WoS 001129221300001
Keywords in English angle-resolved photoemission spectroscopy; ferroelectricity; IV-VI compounds; phase transition; rashba spin texture; x-ray diffraction
Tags rivok
Tags International impact, Reviewed
Changed by Changed by: Mgr. Marie Šípková, DiS., učo 437722. Changed: 2/4/2024 09:47.
Abstract
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials are established to belong to this class of multifunctional materials. Here, Pb1−xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion are demonstrated by temperature dependent X-ray diffraction, and their effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. This work defines Pb1−xGexTe as a high-potential FERSC system for spintronic applications.
Links
EH22_008/0004572, research and development projectName: Kvantové materiály pro aplikace v udržitelných technologiích
90251, large research infrastructuresName: CzechNanoLab II
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