Influence of oxygen flow on the structure, chemical
composition, and dielectric strength of AlxTayOz thin films
deposited by pulsed-DC reactive magnetron sputtering

J 2025

Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

DREVET, Richard Gaetan Paul; Pavel SOUČEK; Pavel MAREŠ; Pavel ONDRAČKA; Matej FEKETE et. al.

Basic information

Original name

Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

Authors

DREVET, Richard Gaetan Paul (250 France, belonging to the institution); Pavel SOUČEK (203 Czech Republic, belonging to the institution); Pavel MAREŠ; Pavel ONDRAČKA (203 Czech Republic, belonging to the institution); Matej FEKETE (703 Slovakia, belonging to the institution); Martin DUBAU and Petr VAŠINA (203 Czech Republic, belonging to the institution)

Edition

Surface and Coatings Technology, Elsevier B.V. 2025, 0257-8972

Other information

Language

English

Type of outcome

Article in a journal

Field of Study

10305 Fluids and plasma physics

Country of publisher

Switzerland

Confidentiality degree

is not subject to a state or trade secret

References:

URL

Impact factor

Impact factor: 6.100 in 2024

Organization unit

Faculty of Science

DOI

https://doi.org/10.1016/j.surfcoat.2025.131865

UT WoS

001419678800001

EID Scopus

2-s2.0-85216462344

Keywords in English

Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown

Abstract

In the original language

This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 +/- 50 V center dot mu m-1 was obtained for 80 at.% Al/20 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films.

Links

FW06010462, research and development project

Name: Tenzometrické tenkovrstvé senzory s vysokou citlivostí a životností připravované pomocí magnetronové depozice

Investor: Technology Agency of the Czech Republic, Subprograms 1 Technology leaders

90239, large research infrastructures

Name: CEPLANT II

90251, large research infrastructures

Name: CzechNanoLab II

Cite

DREVET, Richard Gaetan Paul; Pavel SOUČEK; Pavel MAREŠ; Pavel ONDRAČKA; Matej FEKETE; Martin DUBAU and Petr VAŠINA. Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering. Surface and Coatings Technology. Elsevier B.V., 2025, vol. 498, February, p. 1-12. ISSN 0257-8972. Available from: https://doi.org/10.1016/j.surfcoat.2025.131865.

@article{2481301,
   author = {Drevet, Richard Gaetan Paul and Souček, Pavel and Mareš, Pavel and Ondračka, Pavel and Fekete, Matej and Dubau, Martin and Vašina, Petr},
   article_number = {February},
   doi = {https://doi.org/10.1016/j.surfcoat.2025.131865},
   keywords = {Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown},
   language = {eng},
   issn = {0257-8972},
   journal = {Surface and Coatings Technology},
   title = {Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering},
   url = {https://doi.org/10.1016/j.surfcoat.2025.131865},
   volume = {498},
   year = {2025}
}

TY  - JOUR
ID  - 2481301
AU  - Drevet, Richard Gaetan Paul - Souček, Pavel - Mareš, Pavel - Ondračka, Pavel - Fekete, Matej - Dubau, Martin - Vašina, Petr
PY  - 2025
TI  - Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering
JF  - Surface and Coatings Technology
VL  - 498
IS  - February
SP  - 1-12
EP  - 1-12
PB  - Elsevier B.V.
SN  - 02578972
KW  - Reactive magnetron sputtering
KW  - Ternary oxide
KW  - Aluminum
KW  - Tantalum
KW  - Dielectric strength
KW  - Dielectric breakdown
UR  - https://doi.org/10.1016/j.surfcoat.2025.131865
N2  - This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 +/- 50 V center dot mu m-1 was obtained for 80 at.% Al/20 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films.
ER  -

DREVET, Richard Gaetan Paul; Pavel SOUČEK; Pavel MAREŠ; Pavel ONDRAČKA; Matej FEKETE; Martin DUBAU and Petr VAŠINA. Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering. \textit{Surface and Coatings Technology}. Elsevier B.V., 2025, vol.~498, February, p.~1-12. ISSN~0257-8972. Available from: https://doi.org/10.1016/j.surfcoat.2025.131865.

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