J 2000

Interdiffusion in amorphous Nb/Si multilayers

BOCHNÍČEK, Zdeněk and Ivo VÁVRA

Basic information

Original name

Interdiffusion in amorphous Nb/Si multilayers

Authors

BOCHNÍČEK, Zdeněk and Ivo VÁVRA

Edition

Materials Letters, Amsterdam, Holandsko, Elsevier Science, 2000, 0167-577X

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 0.632

RIV identification code

RIV/00216224:14310/00:00002691

Organization unit

Faculty of Science

UT WoS

000088691600012

Keywords in English

Nb/Si multilayer; Interdiffusion; Thermal stability

Tags

Změněno: 8/1/2001 11:22, doc. RNDr. Zdeněk Bochníček, Dr.

Abstract

V originále

The interdiffusion in amorphous Nb/Si multilayers has been studied using x-ray optical reflection and TEM in temperature range from 150degC up to 350degC. In the whole temperature scale the experimental data show that annealing causes interface shift without any other detectable change of multilayer parameters, namely period and interface roughness. The model based on diffusion of Si into Nb has been proposed which fits very well Arrhenius relation for diffusion coefficient and provides values comparable with previously published ones.

Links

GA202/98/0569, research and development project
Name: Sledování teplotní stability vrstevnatých systémů vysokorozlišujícími metodami rtg difrakce a optické reflexe rtg záření při žíhání in situ
Investor: Czech Science Foundation, Thermal stability of layered systems studied by high resolution x-ray diffraction and optical reflection of x-rays in situ during annealing
VS96102, research and development project
Name: Laboratoř tenkých vrstev a nanostruktur
Investor: Ministry of Education, Youth and Sports of the CR, Laboratory of thin films and nanostructures