BOCHNÍČEK, Zdeněk, Ivo VÁVRA and Václav HOLÝ. Thermal stability of amorphous Nb/Si multilayers studied by x-ray reflection. Bulletin Krystalografické společnosti Materials Structure. 1999, vol. 6, No 1, p. 57. ISSN 1211-5895.
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Basic information
Original name Thermal stability of amorphous Nb/Si multilayers studied by x-ray reflection
Authors BOCHNÍČEK, Zdeněk, Ivo VÁVRA and Václav HOLÝ.
Edition Bulletin Krystalografické společnosti Materials Structure, 1999, 1211-5895.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/99:00003503
Organization unit Faculty of Science
Keywords in English thermal stability; mutlilayers; x-ray reflection
Tags mutlilayers, thermal stability, X-ray reflection
Changed by Changed by: doc. RNDr. Zdeněk Bochníček, Dr., učo 438. Changed: 31/1/2001 15:50.
Abstract
The thermal stability was studied in temperature range from 150C up to 350C. It has been found, that interdifusion causes the interface shift without lost of interface sharpness. The diffusion model has been suggested that is based on enhanced diffusion of Si into Nb component of the multilayer.
Links
GA202/98/0569, research and development projectName: Sledování teplotní stability vrstevnatých systémů vysokorozlišujícími metodami rtg difrakce a optické reflexe rtg záření při žíhání in situ
Investor: Czech Science Foundation, Thermal stability of layered systems studied by high resolution x-ray diffraction and optical reflection of x-rays in situ during annealing
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