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@inproceedings{357571, author = {Sťahel, Pavel and Sládek, Petr and Roca i Cabarrocas, Pere and Šťastný, Jiří}, address = {Brno}, booktitle = {Electronic Devices and Systems Y2K - Proceedings}, edition = {první}, keywords = {amorphous silicon; doping; metastability}, language = {eng}, location = {Brno}, isbn = {80-214-1780-3}, pages = {207-212}, publisher = {ing. Zdeněk Novotný, CSc.}, title = {Origin of the metastability of phosphorus or boron doped a-Si:H films}, year = {2000} }
TY - JOUR ID - 357571 AU - Sťahel, Pavel - Sládek, Petr - Roca i Cabarrocas, Pere - Šťastný, Jiří PY - 2000 TI - Origin of the metastability of phosphorus or boron doped a-Si:H films PB - ing. Zdeněk Novotný, CSc. CY - Brno SN - 8021417803 KW - amorphous silicon KW - doping KW - metastability N2 - The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role. ER -
SŤAHEL, Pavel, Petr SLÁDEK, Pere ROCA I CABARROCAS a Jiří ŠŤASTNÝ. Origin of the metastability of phosphorus or boron doped a-Si:H films. In \textit{Electronic Devices and Systems Y2K - Proceedings}. první. Brno: ing. Zdeněk Novotný, CSc., 2000, s.~207-212. ISBN~80-214-1780-3.
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