D 2000

Origin of the metastability of phosphorus or boron doped a-Si:H films

SŤAHEL, Pavel, Petr SLÁDEK, Pere ROCA I CABARROCAS and Jiří ŠŤASTNÝ

Basic information

Original name

Origin of the metastability of phosphorus or boron doped a-Si:H films

Authors

SŤAHEL, Pavel (203 Czech Republic), Petr SLÁDEK (203 Czech Republic, guarantor), Pere ROCA I CABARROCAS (250 France) and Jiří ŠŤASTNÝ (203 Czech Republic)

Edition

první. Brno, Electronic Devices and Systems Y2K - Proceedings, p. 207-212, 2000

Publisher

ing. Zdeněk Novotný, CSc.

Other information

Language

English

Type of outcome

Stať ve sborníku

Field of Study

10302 Condensed matter physics

Country of publisher

Czech Republic

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14410/00:00005993

Organization unit

Faculty of Education

ISBN

80-214-1780-3

Keywords in English

amorphous silicon; doping; metastability

Tags

Změněno: 20/5/2003 17:08, doc. RNDr. Petr Sládek, CSc.

Abstract

V originále

The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role.

Links

MSM 143100003, plan (intention)
Name: Studium plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek
Investor: Ministry of Education, Youth and Sports of the CR, Study of plasmachemical reactions in non-isothermic low pressure plasma and its interaction with the surface of solid substrates