| DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER, Zdeněk BOCHNÍČEK a G. BAUER. GID study of strains in Si due to patterned SiO2. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, roč. 34, 10A, s. A197, 6 s. ISSN 0022-3727. 2001. |
Další formáty:
BibTeX
LaTeX
RIS
@article{362574,
author = {Daniel, A.; and Holý, Václav and Zhuang, Y. and Roch, T. and Grenzer, J. and Bochníček, Zdeněk and Bauer, G.},
article_location = {Velká Britanie},
article_number = {10A},
keywords = {GID; stress;SiO2},
language = {eng},
issn = {0022-3727},
journal = {J. Phys. D: Appl. Phys.},
title = {GID study of strains in Si due to patterned SiO2},
volume = {34},
year = {2001}
}
TY - JOUR
ID - 362574
AU - Daniel, A.; - Holý, Václav - Zhuang, Y. - Roch, T. - Grenzer, J. - Bochníček, Zdeněk - Bauer, G.
PY - 2001
TI - GID study of strains in Si due to patterned SiO2
JF - J. Phys. D: Appl. Phys.
VL - 34
IS - 10A
SP - A197
EP - A197
PB - IOP Publishing Ltd
SN - 00223727
KW - GID
KW - stress;SiO2
N2 - Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved.
ER -
DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER, Zdeněk BOCHNÍČEK a G. BAUER. GID study of strains in Si due to patterned SiO2. \textit{J. Phys. D: Appl. Phys.}. Velká Britanie: IOP Publishing Ltd, roč.~34, 10A, s.~A197, 6 s. ISSN~0022-3727. 2001.
|
