DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER, Zdeněk BOCHNÍČEK and G. BAUER. GID study of strains in Si due to patterned SiO2. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2001, vol. 34, 10A, p. A197, 6 pp. ISSN 0022-3727.
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Basic information
Original name GID study of strains in Si due to patterned SiO2
Authors DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER, Zdeněk BOCHNÍČEK and G. BAUER.
Edition J. Phys. D: Appl. Phys. Velká Britanie, IOP Publishing Ltd, 2001, 0022-3727.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United Kingdom of Great Britain and Northern Ireland
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 1.260
RIV identification code RIV/00216224:14310/01:00004220
Organization unit Faculty of Science
UT WoS 000169093700042
Keywords in English GID; stress;SiO2
Tags GID, SiO2, stress
Changed by Changed by: doc. RNDr. Zdeněk Bochníček, Dr., učo 438. Changed: 29/5/2001 17:05.
Abstract
Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved.
Links
VS96102, research and development projectName: Laboratoř tenkých vrstev a nanostruktur
Investor: Ministry of Education, Youth and Sports of the CR, Laboratory of thin films and nanostructures
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