2001
GID study of strains in Si due to patterned SiO2
DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER et. al.Basic information
Original name
GID study of strains in Si due to patterned SiO2
Authors
DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER, Zdeněk BOCHNÍČEK and G. BAUER
Edition
J. Phys. D: Appl. Phys. Velká Britanie, IOP Publishing Ltd, 2001, 0022-3727
Other information
Language
English
Type of outcome
Article in a journal
Field of Study
10302 Condensed matter physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
is not subject to a state or trade secret
Impact factor
Impact factor: 1.260
RIV identification code
RIV/00216224:14310/01:00004220
Organization unit
Faculty of Science
UT WoS
000169093700042
Keywords in English
GID; stress;SiO2
Changed: 29/5/2001 17:05, doc. RNDr. Zdeněk Bochníček, Dr.
Abstract
V originále
Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved.
Links
| VS96102, research and development project |
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