Detailed Information on Publication Record
2001
XPS and Ellipsometric Study of DLC/Silicon Interface
ZAJÍČKOVÁ, Lenka, Kateřina VELTRUSKÁ, Nataliya TSUD and Daniel FRANTABasic information
Original name
XPS and Ellipsometric Study of DLC/Silicon Interface
Authors
ZAJÍČKOVÁ, Lenka (203 Czech Republic, guarantor), Kateřina VELTRUSKÁ (203 Czech Republic), Nataliya TSUD and Daniel FRANTA (203 Czech Republic)
Edition
Vacuum, USA, ELSEVIER (PERGAMON), 2001, 0042-207X
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10305 Fluids and plasma physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 0.541
RIV identification code
RIV/00216224:14310/01:00004313
Organization unit
Faculty of Science
UT WoS
000168796500032
Keywords in English
DLC films; XPS; Ellipsometry; Interface
Tags
Tags
International impact, Reviewed
Změněno: 17/7/2007 17:40, doc. Mgr. Lenka Zajíčková, Ph.D.
Abstract
V originále
Diamond-like carbon (DLC) films were prepared by plasma enhanced CVD from the mixture of methane and argon on silicon substrates. Films were characterized by multi-sample modification of variable angle spectroscopic ellipsometry. The ellipsometry showed that there is a transition interlayer between the DLC film and the silicon substrate that cannot be attributed to a thin silicon dioxide layer but rather to amorphous silicon and/or modified oxide layer. TRIM calculations revealed that argon or carbon ions could not produce a significant layer of amorphous silicon because the depth of target atom displacements is bellow the thickness of a native oxide layer. The chemical composition of a DLC film profile including a DLC/silicon interface was studied by X-ray photoelectron spectroscopy (XPS) coupled with an argon sputtering of the 34 nm thick DLC film. The DLC/silicon interface composed from less than 6 % of oxygen and gradually decreasing and increasing carbon and silicon percentage, respectively.
Links
GA202/00/P037, research and development project |
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GA202/98/0988, research and development project |
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ME 301, research and development project |
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MSM 143100003, plan (intention) |
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VS96084, research and development project |
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