J 2001

Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires

HOLY, V., T. ROCH, J. STANGL and G. BAUER

Basic information

Original name

Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires

Authors

HOLY, V., T. ROCH, J. STANGL and G. BAUER

Edition

Phys. Rev. B, USA, The American Phys. Society, 2001, 0163-1829

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Czech Republic

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 3.070

RIV identification code

RIV/00216224:14310/01:00005200

Organization unit

Faculty of Science

UT WoS

000168937200065

Keywords in English

KINETIC GROWTH INSTABILITIES; VICINAL SI(001) SURFACES; STEPPED INTERFACES; GE ISLANDS; MULTILAYERS; DIFFRACTION; SI(113); STRAIN

Tags

diffraction, GE ISLANDS, KINETIC GROWTH INSTABILITIES, multilayers, SI(113), STEPPED INTERFACES, STRAIN, VICINAL SI(001) SURFACES
Změněno: 16/1/2002 08:27, prof. RNDr. Václav Holý, CSc.

Abstract

V originále

The structure of self-organized quantum wires buried at the interfaces of a SiGe/Si multilayer is investigated by grazing incidence small-angle x-ray scattering. A nearly periodic distribution of wires, well described by a short-range ordering model, gives rise to intensity satellite maxima in reciprocal space. The shape of the wire cross section is determined from the heights of these intensity maxima, and the analysis reveals that the conventional step-bunching model is not sufficient to explain the wire shape.

Links

GA202/00/0354, research and development project
Name: Procesy samouspořádání rozhraní při epitaxním růstu polovodičových supermřížek
Investor: Czech Science Foundation, Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices
Displayed: 8/11/2024 21:39