Detailed Information on Publication Record
2001
X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films
LI, J. H., J. KULIK and V. HOLYBasic information
Original name
X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films
Authors
LI, J. H., J. KULIK and V. HOLY
Edition
Phys. Rev. B, USA, The American Phys. Society, 2001, 0163-1829
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Czech Republic
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 3.070
RIV identification code
RIV/00216224:14310/01:00005202
Organization unit
Faculty of Science
UT WoS
000168215400062
Keywords in English
CHEMICAL-VAPOR-DEPOSITION; DOMAIN-STRUCTURES; LENGTH MISMATCH; PHASE EPITAXY; LAYERS; GAINP; GROWTH; PHOTOLUMINESCENCE; MECHANISM
Tags
Změněno: 16/1/2002 08:33, prof. RNDr. Václav Holý, CSc.
Abstract
V originále
A model has been developed to describe x-ray scattering from CuPt-type ordered III-V ternary semiconductor alloys. The model takes into account the size distribution of the two different laminae-shaped variants, the random distribution of antiphase domain boundaries in each variant, and the atomic displacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the weak-ordering reflections from CuPt-ordered Ga0.5In0.5P and Al0.5In0.5As samples. By comparing the experimental results and the model calculations, structure information, including the average number of atomic layers in the laminae of each variant, the average antiphase domain size, and the average order parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.
Links
| GA202/00/0354, research and development project |
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| VS96102, research and development project |
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