Detailed Information on Publication Record
2001
X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy
MEDUŇA, Mojmír, Václav HOLÝ and T. ROCHBasic information
Original name
X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy
Authors
MEDUŇA, Mojmír (203 Czech Republic, guarantor), Václav HOLÝ (203 Czech Republic) and T. ROCH
Edition
Journal of Applied Physics, USA, American institute of physics, 2001, 0021-8979
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Czech Republic
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 2.128
RIV identification code
RIV/00216224:14310/01:00005203
Organization unit
Faculty of Science
UT WoS
000168130100025
Keywords in English
SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES
Tags
International impact, Reviewed
Změněno: 14/2/2007 09:49, Mgr. Mojmír Meduňa, Ph.D.
Abstract
V originále
We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.
Links
| GA202/00/0354, research and development project |
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| VS96102, research and development project |
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