X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

MEDUŇA, Mojmír, Václav HOLÝ and T. ROCH. X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy. Journal of Applied Physics. USA: American institute of physics, 2001, vol. 89, No 9, p. 4836-4842. ISSN 0021-8979.

Basic information

• Original name: X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy
• Authors: MEDUŇA, Mojmír (203 Czech Republic, guarantor), Václav HOLÝ (203 Czech Republic) and T. ROCH.
• Edition: Journal of Applied Physics, USA, American institute of physics, 2001, 0021-8979.

Other information

• Original language: English
• Type of outcome: Article in a journal
• Field of Study: 10302 Condensed matter physics
• Country of publisher: Czech Republic
• Confidentiality degree: is not subject to a state or trade secret
• Impact factor: Impact factor: 2.128
• RIV identification code: RIV/00216224:14310/01:00005203
• Organization unit: Faculty of Science
• UT WoS: 000168130100025
• Keywords in English: SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES
• Tags: GE ISLANDS, growth, SCATTERING, SI(001) SURFACES, SUPERLATTICES
• Tags: International impact, Reviewed

Abstract

We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.

Links

• GA202/00/0354, research and development project: Name: Procesy samouspořádání rozhraní při epitaxním růstu polovodičových supermřížek

Investor: Czech Science Foundation, Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices

• VS96102, research and development project: Name: Laboratoř tenkých vrstev a nanostruktur

Investor: Ministry of Education, Youth and Sports of the CR, Laboratory of thin films and nanostructures