MEDUŇA, Mojmír, Václav HOLÝ and T. ROCH. X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy. Journal of Applied Physics. USA: American institute of physics, 2001, vol. 89, No 9, p. 4836-4842. ISSN 0021-8979. |
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@article{385315, author = {Meduňa, Mojmír and Holý, Václav and Roch, T.}, article_location = {USA}, article_number = {9}, keywords = {SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES}, language = {eng}, issn = {0021-8979}, journal = {Journal of Applied Physics}, title = {X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy}, volume = {89}, year = {2001} }
TY - JOUR ID - 385315 AU - Meduňa, Mojmír - Holý, Václav - Roch, T. PY - 2001 TI - X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy JF - Journal of Applied Physics VL - 89 IS - 9 SP - 4836 EP - 4836 PB - American institute of physics SN - 00218979 KW - SI(001) SURFACES KW - GE ISLANDS KW - SCATTERING KW - GROWTH KW - SUPERLATTICES N2 - We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. ER -
MEDUŇA, Mojmír, Václav HOLÝ and T. ROCH. X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy. \textit{Journal of Applied Physics}. USA: American institute of physics, 2001, vol.~89, No~9, p.~4836-4842. ISSN~0021-8979.
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