J 2001

Deposition Process Based on Organosilicon Precursors in Dielectric Barrier Discharges at Atmospheric Pressure - A Comparison

SONNENFELD, Axel, T. M. TUN, Lenka ZAJÍČKOVÁ, K. V. KOZLOV, H.-E. WAGNER et. al.

Basic information

Original name

Deposition Process Based on Organosilicon Precursors in Dielectric Barrier Discharges at Atmospheric Pressure - A Comparison

Authors

SONNENFELD, Axel, T. M. TUN, Lenka ZAJÍČKOVÁ (203 Czech Republic, guarantor), K. V. KOZLOV, H.-E. WAGNER, J. F. BEHNKE and R. HIPPLER

Edition

Plasmas and Polymers, New York, KLUWER ACADEMIC/PLENUM PUBLISHERS, 2001, 1084-0184

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14310/01:00005627

Organization unit

Faculty of Science

Keywords in English

DBD

Tags

Tags

International impact, Reviewed
Změněno: 17/7/2007 17:51, doc. Mgr. Lenka Zajíčková, Ph.D.

Abstract

V originále

Deposition Process Based on Organosilicon Precursors in Dielectric Barrier Discharges at Atmospheric Pressure - A Comparison

Links

GA202/00/P037, research and development project
Name: Plazmová depozice ochranných vrstev: charakterizace připravených vrstev a diagnostika užitého reaktivního plazmatu
Investor: Czech Science Foundation, Plasma deposition of protective coatings: characterisation of prepared films and diagnostics of reactive plasmas used