Detailed Information on Publication Record
2002
Modification of the optical parameters of silicon thin films due to light scattering
SLÁDEK, Petr, Pavel SŤAHEL and Jiří ŠŤASTNÝBasic information
Original name
Modification of the optical parameters of silicon thin films due to light scattering
Authors
SLÁDEK, Petr (203 Czech Republic, guarantor, belonging to the institution), Pavel SŤAHEL (203 Czech Republic, belonging to the institution) and Jiří ŠŤASTNÝ (203 Czech Republic, belonging to the institution)
Edition
Journal of Non-Crystalline Solids, Nizozemsko, Elsevier Science B.V. 2002, 0022-3093
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Netherlands
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 1.435
RIV identification code
RIV/00216224:14410/02:00007015
Organization unit
Faculty of Education
UT WoS
000175757400059
Keywords in English
silicon thin films; absorption coefficient; light sacttering
Tags
International impact, Reviewed
Změněno: 3/2/2020 15:35, Dana Nesnídalová
Abstract
V originále
The enhanced light absorption observed in microcrystalline and polymorphous hydrogenated silicon films may partly be due to light scattering. To estimate the importance of this phenomenon. we used the new 'photocurrent induced by light scattering' method. The exciting beam is impinging on the sample outside the inter-electrode region: by changing the position of the exciting light spot and the photon energy. it is possible to estimate the light scattering effects. We applied this method to films of different materials and checked our conclusions by using the modified constant photocurrent method.
Links
| MSM 143100003, plan (intention) |
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| OC 527.20, research and development project |
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