SLÁDEK, Petr, Pavel SŤAHEL and Jiří ŠŤASTNÝ. Modification of the optical parameters of silicon thin films due to light scattering. Journal of Non-Crystalline Solids. Nizozemsko: Elsevier Science B.V., 2002, vol. 2002, 299-302, p. 295-299. ISSN 0022-3093. Available from: https://dx.doi.org/10.1016/S0022-3093(01)00952-8. |
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@article{407593, author = {Sládek, Petr and Sťahel, Pavel and Šťastný, Jiří}, article_location = {Nizozemsko}, article_number = {299-302}, doi = {http://dx.doi.org/10.1016/S0022-3093(01)00952-8}, keywords = {silicon thin films; absorption coefficient; light sacttering}, language = {eng}, issn = {0022-3093}, journal = {Journal of Non-Crystalline Solids}, title = {Modification of the optical parameters of silicon thin films due to light scattering}, volume = {2002}, year = {2002} }
TY - JOUR ID - 407593 AU - Sládek, Petr - Sťahel, Pavel - Šťastný, Jiří PY - 2002 TI - Modification of the optical parameters of silicon thin films due to light scattering JF - Journal of Non-Crystalline Solids VL - 2002 IS - 299-302 SP - 295-299 EP - 295-299 PB - Elsevier Science B.V. SN - 00223093 KW - silicon thin films KW - absorption coefficient KW - light sacttering N2 - The enhanced light absorption observed in microcrystalline and polymorphous hydrogenated silicon films may partly be due to light scattering. To estimate the importance of this phenomenon. we used the new 'photocurrent induced by light scattering' method. The exciting beam is impinging on the sample outside the inter-electrode region: by changing the position of the exciting light spot and the photon energy. it is possible to estimate the light scattering effects. We applied this method to films of different materials and checked our conclusions by using the modified constant photocurrent method. ER -
SLÁDEK, Petr, Pavel SŤAHEL and Jiří ŠŤASTNÝ. Modification of the optical parameters of silicon thin films due to light scattering. \textit{Journal of Non-Crystalline Solids}. Nizozemsko: Elsevier Science B.V., 2002, vol.~2002, 299-302, p.~295-299. ISSN~0022-3093. Available from: https://dx.doi.org/10.1016/S0022-3093(01)00952-8.
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