Influence of overlayers on determination of the optical
constants of ZnSe thin films

J 2002

Influence of overlayers on determination of the optical constants of ZnSe thin films

FRANTA, Daniel, Ivan OHLÍDAL, Petr KLAPETEK, Alberto MONTAIGNE-RAMIL, Alberta BONANNI et. al.

Basic information

Original name

Influence of overlayers on determination of the optical constants of ZnSe thin films

Authors

FRANTA, Daniel (203 Czech Republic, guarantor), Ivan OHLÍDAL (203 Czech Republic), Petr KLAPETEK (203 Czech Republic), Alberto MONTAIGNE-RAMIL (192 Cuba), Alberta BONANNI (380 Italy), David STIFTER (40 Austria) and Helmut SITTER (40 Austria)

Edition

Journal of Applied Physics, USA, American institute of physics, 2002, 0021-8979

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.281

RIV identification code

RIV/00216224:14310/02:00008572

Organization unit

Faculty of Science

UT WoS

000177171700023

Keywords in English

SPECTROSCOPIC ELLIPSOMETRY; GAAS; MULTISAMPLE; OXIDE

Abstract

V originále

In this article a multisample modification of variable angle spectroscopic ellipsometry is used to characterize ZnSe thin films prepared by molecular beam epitaxy on substrates formed by GaAs single crystals. Atomic force microscopy (AFM) is employed to characterize the morphology of the upper boundaries of these films. To interpret the ellipsometric data a relatively complicated physical model that contains a rough overlayer between the ambient and the ZnSe film and a transition layer between the GaAs substrate and the ZnSe film is employed. Several models of dispersion of the optical constants of the overlayers are examined to interpret the ellipsometric data. It is shown that the choice of overlayer dispersion model has a strong influence on determining the optical constants and dielectric function of the ZnSe films in the near-UV region. Within the visible region there are no differences between the overlayer dispersion models regarding determination of the ZnSe optical constants. The spectral dependences of the ZnSe dielectric function obtained are compared with those presented by other researchers. Further, by AFM it is shown that the upper boundaries of the ZnSe films are randomly rough and partially covered with small objects.

Links

MSM 143100003, plan (intention)

Name: Studium plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek

Investor: Ministry of Education, Youth and Sports of the CR, Study of plasmachemical reactions in non-isothermic low pressure plasma and its interaction with the surface of solid substrates

Citovat

FRANTA, Daniel, Ivan OHLÍDAL, Petr KLAPETEK, Alberto MONTAIGNE-RAMIL, Alberta BONANNI, David STIFTER and Helmut SITTER. Influence of overlayers on determination of the optical constants of ZnSe thin films. Journal of Applied Physics. USA: American institute of physics, 2002, vol. 92, No 4, p. 1873-1880. ISSN 0021-8979.

@article{407666,
   author = {Franta, Daniel and Ohlídal, Ivan and Klapetek, Petr and MontaigneandRamil, Alberto and Bonanni, Alberta and Stifter, David and Sitter, Helmut},
   article_location = {USA},
   article_number = {4},
   keywords = {SPECTROSCOPIC ELLIPSOMETRY; GAAS; MULTISAMPLE; OXIDE},
   language = {eng},
   issn = {0021-8979},
   journal = {Journal of Applied Physics},
   title = {Influence of overlayers on determination of the optical constants of ZnSe thin films},
   url = {http://hydra.physics.muni.cz/~franta/bib/JAP92_1873.html},
   volume = {92},
   year = {2002}
}

TY  - JOUR
ID  - 407666
AU  - Franta, Daniel - Ohlídal, Ivan - Klapetek, Petr - Montaigne-Ramil, Alberto - Bonanni, Alberta - Stifter, David - Sitter, Helmut
PY  - 2002
TI  - Influence of overlayers on determination of the optical constants of ZnSe thin films
JF  - Journal of Applied Physics
VL  - 92
IS  - 4
SP  - 1873-1880
EP  - 1873-1880
PB  - American institute of physics
SN  - 00218979
KW  - SPECTROSCOPIC ELLIPSOMETRY
KW  - GAAS
KW  - MULTISAMPLE
KW  - OXIDE
UR  - http://hydra.physics.muni.cz/~franta/bib/JAP92_1873.html
N2  - In this article a multisample modification of variable angle spectroscopic ellipsometry is used to characterize ZnSe thin films prepared by molecular beam epitaxy on substrates formed by GaAs single crystals. Atomic force microscopy (AFM) is employed to characterize the morphology of the upper boundaries of these films. To interpret the ellipsometric data a relatively complicated physical model that contains a rough overlayer between the ambient and the ZnSe film and a transition layer between the GaAs substrate and the ZnSe film is employed. Several models of dispersion of the optical constants of the overlayers are examined to interpret the ellipsometric data. It is shown that the choice of overlayer dispersion model has a strong influence on determining the optical constants and dielectric function of the ZnSe films in the near-UV region. Within the visible region there are no differences between the overlayer dispersion models regarding determination of the ZnSe optical constants. The spectral dependences of the ZnSe dielectric function obtained are compared with those presented by other researchers. Further, by AFM it is shown that the upper boundaries of the ZnSe films are randomly rough and partially covered with small objects.
ER  -

FRANTA, Daniel, Ivan OHLÍDAL, Petr KLAPETEK, Alberto MONTAIGNE-RAMIL, Alberta BONANNI, David STIFTER and Helmut SITTER. Influence of overlayers on determination of the optical constants of ZnSe thin films. \textit{Journal of Applied Physics}. USA: American institute of physics, 2002, vol.~92, No~4, p.~1873-1880. ISSN~0021-8979.

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