Detailed Information on Publication Record
2003
Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model
FRANTA, Daniel, Ivan OHLÍDAL, Miloslav FRUMAR and Jaroslav JEDELSKÝBasic information
Original name
Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model
Authors
FRANTA, Daniel (203 Czech Republic, guarantor), Ivan OHLÍDAL (203 Czech Republic), Miloslav FRUMAR (203 Czech Republic) and Jaroslav JEDELSKÝ (203 Czech Republic)
Edition
Applied Surface Science, USA, ELSEVIER (NORTH-HOLLAND), 2003, 0169-4332
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 1.284
RIV identification code
RIV/00216224:14310/03:00008103
Organization unit
Faculty of Science
UT WoS
000183967200022
Keywords in English
Dispersion model of the optical constants; Amorphous solids; Chalcogenide thin films
Změněno: 25/12/2003 01:20, Mgr. Daniel Franta, Ph.D.
Abstract
V originále
In this paper, a new dispersion model of the optical constants of amorphous solids enabling us to perform an efficient parameterization of the spectral dependences of the optical constants of chalcogenide thin films will be presented. This dispersion model is based on mathematical modeling the density of electronic states (DOS) corresponding to both the valence and conduction bands. The imaginary part of the dielectric function is then calculated by the numerical convolution of the DOS. The real part of the dielectric function is calculated using the corresponding Kramers-Kronig (KK) relation in a suitable numerical way. Moreover, the existence of the transitions between the localized states inside the band gap and the extended states inside both the valence and conduction bands is also taken into account using the corresponding convolutions. Thus, the dispersion model presented includes the absorption corresponding to the Urbach and Tauc regions. Then the dispersion model described allows to interpret spectroellipsometric and spectrophotometric data measured for the chalcogenide thin films within the wide spectral region (200-900 nm).
Links
GA203/00/0085, research and development project |
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