Detailed Information on Publication Record
2002
Nitrogen in Czochralski-grown silicon
ŠIK, Jan, Michal LORENC and Richard ŠTOUDEKBasic information
Original name
Nitrogen in Czochralski-grown silicon
Authors
ŠIK, Jan (203 Czech Republic), Michal LORENC (203 Czech Republic) and Richard ŠTOUDEK (203 Czech Republic, guarantor)
Edition
Neuveden, SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský, p. 125-128, 4 pp. 2002
Publisher
Neuveden
Other information
Language
English
Type of outcome
Stať ve sborníku
Field of Study
10302 Condensed matter physics
Country of publisher
Czech Republic
Confidentiality degree
není předmětem státního či obchodního tajemství
RIV identification code
RIV/00216224:14310/02:00008873
Organization unit
Faculty of Science
Keywords in English
silicon; nitrogen
Změněno: 27/5/2004 17:29, Mgr. Richard Štoudek, Ph.D.
Abstract
V originále
Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectroscopy (SIMS) are used to study nitrogen-doped Czochralski-grown (CZ) crystal. We observe nitrogen-related vibrational modes typical for CZ silicon and estimate nitrogen content to be 1.6x10^15 cm-3 from its quantitative analysis. This value is in a good agreement with result of 2.4x10^15 cm-3 from calculations assuming constant segregation coefficient 7x10^(-4). On the other hand, SIMS measurements give much higher value of 8.3x10^15 cm-3. Only 4-5% of nitrogen occupy substitutional sites. We also observe an obstruction of dislocation movement during crystal cooling.
Links
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