Detailed Information on Publication Record
2003
Atomic force microscopy characterization of ZnTe epitaxial films
KLAPETEK, Petr, Ivan OHLÍDAL, Daniel FRANTA, Alberto MONTAIGNE-RAMIL, Alberta BONANNI et. al.Basic information
Original name
Atomic force microscopy characterization of ZnTe epitaxial films
Authors
KLAPETEK, Petr (203 Czech Republic), Ivan OHLÍDAL (203 Czech Republic, guarantor), Daniel FRANTA (203 Czech Republic), Alberto MONTAIGNE-RAMIL (192 Cuba), Alberta BONANNI (380 Italy), David STIFTER (40 Austria) and Helmut SITTER (40 Austria)
Edition
Acta Physica Slovaca, Bratislava, Institute of Physics, SAS, 2003, 0323-0465
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Slovakia
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 0.579
RIV identification code
RIV/00216224:14310/03:00009017
Organization unit
Faculty of Science
UT WoS
000183309100005
Keywords in English
OPTICAL METHODS; THIN-FILMS; GOLD
Tags
Změněno: 25/12/2003 01:17, Mgr. Daniel Franta, Ph.D.
Abstract
V originále
In this paper results of a characterization of the surfaces of ZnTe epitaxial thin films exhibiting the different thicknesses are presented. The results mentioned are obtained using the procedures enabling us to determine the values of the following quantities: mean grain size, grain size distribution, root-mean square values of the heights of the irregularities and the diagram describing the distribution of the directions of the normals. For the analysis of the grain structure a watershed algorithm is used. It is shown that the values of these quantities can describe the morphology of the ZnTe film surfaces in a sufficient way. Further, it is shown that the structure of the surfaces of the ZnTe films exhibit facets forming a grain structure. Moreover, it is presented that the ZnTe film surfaces exhibit a strong slope anisotropy and that the linear dimensions of the grains increase with increasing values of the thicknesses of the ZnTe films.
Links
MSM 143100003, plan (intention) |
|