Detailed Information on Publication Record
2003
Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO
VALTR, Miroslav, Lenka ZAJÍČKOVÁ and Vilma BURŠÍKOVÁBasic information
Original name
Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO
Authors
VALTR, Miroslav (203 Czech Republic, guarantor), Lenka ZAJÍČKOVÁ (203 Czech Republic) and Vilma BURŠÍKOVÁ (203 Czech Republic)
Edition
1. vyd. Brno, JUNIORMAT 03, p. 58-59, 2003
Publisher
ÚMI VUT FSI v Brně ve spolupráci s Českou společností pro nové materiály a technologie
Other information
Language
English
Type of outcome
Stať ve sborníku
Field of Study
10305 Fluids and plasma physics
Country of publisher
Czech Republic
Confidentiality degree
není předmětem státního či obchodního tajemství
RIV identification code
RIV/00216224:14330/03:00008608
Organization unit
Faculty of Informatics
ISBN
80-214-2462-1
Keywords in English
plasma;DLC;films;methane;HMDSO;pecvd;radio frequency;discharge;FTIR;normalized absorbance
Tags
Změněno: 29/5/2004 18:14, RNDr. JUDr. Vladimír Šmíd, CSc.
Abstract
V originále
Hard diamond like carbon (DLC) films with an addition of SiOx were deposited by capacitively coupled rf discharges from mixture of methane and hexamethyldisiloxane (HMDSO). The flow rate was changed in order to vary the SiOx content in the films. Thickness of the films was determined by ellipsometry. FTIR spectra showed presence of C-H bonds as well as silicon bonded to hydrogen and hydrocarbon groups. In the region 630-900 cm-1 normalized absorbance was computed. It is shown that the concentration of silicon containing bonds grows with the flow rate of HMDSO growing.
Links
| GA202/00/P037, research and development project |
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| MSM 143100003, plan (intention) |
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