FRUMAR, M., H. TICHÁ, L. KOUDELKA and Jiří FAIMON. Semiconducting glasses of the Ge-Bi-S system. Materials Research Bulletin. New York: Pergamon Press, 1976, vol. 11, No 11, p. 1389-1396, 7 pp. ISSN 0025-5408.
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Basic information
Original name Semiconducting glasses of the Ge-Bi-S system
Name in Czech Polovodivá skla v systému Ge-Bi-S
Authors FRUMAR, M., H. TICHÁ, L. KOUDELKA and Jiří FAIMON.
Edition Materials Research Bulletin, New York, Pergamon Press, 1976, 0025-5408.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10402 Inorganic and nuclear chemistry
Country of publisher Netherlands
Confidentiality degree is not subject to a state or trade secret
Organization unit Faculty of Science
Keywords (in Czech) sklo; Ge; Bi; S; vlastnosti
Keywords in English glass; Ge; Bi; S; property
Tags International impact, Reviewed
Changed by Changed by: doc. Ing. Jiří Faimon, Dr., učo 1405. Changed: 24/9/2009 10:20.
Abstract
The glass forming region of the Ge-Bi-S system was determined. Electrical conductivity, glass-transition temperature, the values of the electrical and optical gaps of several glassy samples of the Ge-Bi-S system were determined. The absorption edge in the short-wavelength region complies with the Urbach rule and it is discussed in terms of the Dow and Redfield theory. The glasses are transparent in the infrared spectral region from 900 to 5000 cm-1.
Abstract (in Czech)
The glass forming region of the Ge-Bi-S system was determined. Electrical conductivity, glass-transition temperature, the values of the electrical and optical gaps of several glassy samples of the Ge-Bi-S system were determined. The absorption edge in the short-wavelength region complies with the Urbach rule and it is discussed in terms of the Dow and Redfield theory. The glasses are transparent in the infrared spectral region from 900 to 5000 cm-1.
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