Detailed Information on Publication Record
2004
Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing
FRANCLOVÁ, Jana, Zuzana KUČEROVÁ, Vilma BURŠÍKOVÁ, Lenka ZAJÍČKOVÁ, Vratislav PEŘINA et. al.Basic information
Original name
Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing
Name in Czech
Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním
Authors
FRANCLOVÁ, Jana (203 Czech Republic), Zuzana KUČEROVÁ (203 Czech Republic), Vilma BURŠÍKOVÁ (203 Czech Republic, guarantor), Lenka ZAJÍČKOVÁ (203 Czech Republic) and Vratislav PEŘINA (203 Czech Republic)
Edition
Czech. J. Phys. Praha, Institute of Physics Academy of Sciences, 2004, 0011-4626
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10305 Fluids and plasma physics
Country of publisher
Czech Republic
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 0.292
RIV identification code
RIV/00216224:14310/04:00021214
Organization unit
Faculty of Science
UT WoS
000226745800004
Keywords in English
Deposited films; plasma enhanced CVD; HMDSO; FTIR; RBS
Tags
Tags
International impact, Reviewed
Změněno: 17/7/2007 18:00, doc. Mgr. Lenka Zajíčková, Ph.D.
V originále
The objective of the present work was to investigate the influence of thermal annealing on the optical and mechanical properties as well as on the chemical structure of plasma deposited SiOxCyHz films. The films were prepared by PECVD from HMDSO/oxygen mixtures under a wide range of deposition conditions. Their optical and mechanical properties were studied by spectroscopic ellipsometry and depth sensing indentation technique, respectively. The atomic composition was determined by RBS and ERDA measurements. FTIR analysis was used to find the densities of particular chemical bonds in the films. The annealed films exhibited changes of the refractive index and extinction coefficient. The refractive index always decreased with increasing annealing temperature. The observed increase in hardness and elastic modulus after annealing was probably correlated with dehydration of the films and an increase of Si-O-Si bonds with increasing annealing temperature.
In Czech
Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním
Links
| ME 489, research and development project |
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| MSM 143100003, plan (intention) |
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| OC 527.20, research and development project |
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