FRANCLOVÁ, Jana, Zuzana KUČEROVÁ, Vilma BURŠÍKOVÁ, Lenka ZAJÍČKOVÁ and Vratislav PEŘINA. Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing. Czech. J. Phys. Praha: Institute of Physics Academy of Sciences, 2004, vol. 2004, No 54, p. C847-C852, 6 pp. ISSN 0011-4626. |
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@article{555878, author = {Franclová, Jana and Kučerová, Zuzana and Buršíková, Vilma and Zajíčková, Lenka and Peřina, Vratislav}, article_location = {Praha}, article_number = {54}, keywords = {Deposited films; plasma enhanced CVD; HMDSO; FTIR; RBS}, language = {eng}, issn = {0011-4626}, journal = {Czech. J. Phys.}, title = {Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing}, volume = {2004}, year = {2004} }
TY - JOUR ID - 555878 AU - Franclová, Jana - Kučerová, Zuzana - Buršíková, Vilma - Zajíčková, Lenka - Peřina, Vratislav PY - 2004 TI - Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing JF - Czech. J. Phys. VL - 2004 IS - 54 SP - C847-C852 EP - C847-C852 PB - Institute of Physics Academy of Sciences SN - 00114626 KW - Deposited films KW - plasma enhanced CVD KW - HMDSO KW - FTIR KW - RBS N2 - The objective of the present work was to investigate the influence of thermal annealing on the optical and mechanical properties as well as on the chemical structure of plasma deposited SiOxCyHz films. The films were prepared by PECVD from HMDSO/oxygen mixtures under a wide range of deposition conditions. Their optical and mechanical properties were studied by spectroscopic ellipsometry and depth sensing indentation technique, respectively. The atomic composition was determined by RBS and ERDA measurements. FTIR analysis was used to find the densities of particular chemical bonds in the films. The annealed films exhibited changes of the refractive index and extinction coefficient. The refractive index always decreased with increasing annealing temperature. The observed increase in hardness and elastic modulus after annealing was probably correlated with dehydration of the films and an increase of Si-O-Si bonds with increasing annealing temperature. ER -
FRANCLOVÁ, Jana, Zuzana KUČEROVÁ, Vilma BURŠÍKOVÁ, Lenka ZAJÍČKOVÁ and Vratislav PEŘINA. Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing. \textit{Czech. J. Phys.}. Praha: Institute of Physics Academy of Sciences, 2004, vol.~2004, No~54, p.~C847-C852, 6 pp. ISSN~0011-4626.
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