D 2004

Monte Carlo and Particle in Cell Simulation of Mirror Effect in PECVD reactor

BRZOBOHATÝ, Oto, Vilma BURŠÍKOVÁ and David TRUNEC

Basic information

Original name

Monte Carlo and Particle in Cell Simulation of Mirror Effect in PECVD reactor

Name in Czech

Monte Carlo a Particle in Cell simulace zrcadlového jevu v PECVD reaktoru

Authors

BRZOBOHATÝ, Oto (203 Czech Republic), Vilma BURŠÍKOVÁ (203 Czech Republic) and David TRUNEC (203 Czech Republic, guarantor)

Edition

Prague, (Czech republic), WDS'04 Proceedings of Contributed Papers, Part II, p. 287-292, 6 pp. 2004

Publisher

MATFYZPRESS

Other information

Language

English

Type of outcome

Stať ve sborníku

Field of Study

10305 Fluids and plasma physics

Country of publisher

Czech Republic

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14310/04:00011745

Organization unit

Faculty of Science

ISBN

80-86732-32-0

Keywords in English

Computer simulation; PECVD; Mirror effect
Změněno: 30/11/2005 10:34, Mgr. Oto Brzobohatý, Ph.D.

Abstract

V originále

We have studied thin film plasma enhanced chemical vapor deposition from methane and thin film sputtering in argon in low pressure rf discharge. We have observed that thickness of a thin film deposited on the upper (grounded) electrode has mirrored substrates placed on the bottom rf powered electrode. This mirror images have not been quite sharp. The same effect was observed when the initially homogeneous film (deposited on the upper electrode) was sputtered in the argon plasma. Again the image of object on the bottom electrode was sputtered in the film on the upper electrode. The mirror effect has been studied via Particle In Cell - Monte Carlo (PIC-MC) computer simulation. In our explanation the mirror effect is caused by the difference between secondary electron emission coefficient of substrate material and material of substrate holder. This difference in the secondary electron emission coefficient affects plasma density upon the substrates and this leads to higher or lower deposition rate on the upper electrode. In our simulation we have calculated distribution of impact position for electrons on grounded electrode which have flew from the powered electrode. We have calculated this distribution for ions created in ionization collisions (of secondary electrons with neutrals) too. We have carried out simulation of this distribution for different pressures.

In Czech

Při studiu depozice tenkých vrstev pomocí metody PECVD byl pozorován tzv. zrcadlový jev. Zrcadlovým jevem myslíme to, že deponovaná vrstva na vrchní elektrodě odráží substrat na spodní elektrodě. Hrany obrazu nejsou zcela ostré. Tento jev jsem se snažili vzsvětli pomocí počitačových simulací, kde jako hlavní příčinu označujeme rozdílnost sekundární emise substrátů a dolní elektrody. Jako hlavní výsledek naších simulací uvádíme prostorové rozděleni sekundárních elektronů a iontů dopadajících na protější elektrodu.

Links

GA202/03/0827, research and development project
Name: Studium elementárních procesů v nízkoteplotním a technologicky orientovaném plazmatu a vývoj relevantních diagnostických metod