MEDUŇA, Mojmír, Jiří NOVÁK, Václav HOLÝ, Günther BAUER, Claudiu FALUB, Soichiro TSUJINO, Elisabeth MÜLLER, Detlev GRÜTZMACHER, Yves CAMPIDELLI, Olivier KERMARREC a Daniel BENSAHEL. Annealing studies of high Ge composition Si/SiGe multilayers. Zeitschrift fur Kristalographie. R. Oldenbourg Verlag GmbH, 2004, roč. 219, č. 4, s. 195-200. ISSN 0044-2968. |
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@article{566677, author = {Meduňa, Mojmír and Novák, Jiří and Holý, Václav and Bauer, Günther and Falub, Claudiu and Tsujino, Soichiro and Müller, Elisabeth and Grützmacher, Detlev and Campidelli, Yves and Kermarrec, Olivier and Bensahel, Daniel}, article_number = {4}, keywords = {Reflectivity; X-ray diffraction; Annealing; Diffusion; Si/SiGe multiple quantum wells}, language = {eng}, issn = {0044-2968}, journal = {Zeitschrift fur Kristalographie}, title = {Annealing studies of high Ge composition Si/SiGe multilayers}, volume = {219}, year = {2004} }
TY - JOUR ID - 566677 AU - Meduňa, Mojmír - Novák, Jiří - Holý, Václav - Bauer, Günther - Falub, Claudiu - Tsujino, Soichiro - Müller, Elisabeth - Grützmacher, Detlev - Campidelli, Yves - Kermarrec, Olivier - Bensahel, Daniel PY - 2004 TI - Annealing studies of high Ge composition Si/SiGe multilayers JF - Zeitschrift fur Kristalographie VL - 219 IS - 4 SP - 195-200 EP - 195-200 PB - R. Oldenbourg Verlag GmbH SN - 00442968 KW - Reflectivity KW - X-ray diffraction KW - Annealing KW - Diffusion KW - Si/SiGe multiple quantum wells N2 - Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C. ER -
MEDUŇA, Mojmír, Jiří NOVÁK, Václav HOLÝ, Günther BAUER, Claudiu FALUB, Soichiro TSUJINO, Elisabeth MÜLLER, Detlev GRÜTZMACHER, Yves CAMPIDELLI, Olivier KERMARREC a Daniel BENSAHEL. Annealing studies of high Ge composition Si/SiGe multilayers. \textit{Zeitschrift fur Kristalographie}. R. Oldenbourg Verlag GmbH, 2004, roč.~219, č.~4, s.~195-200. ISSN~0044-2968.
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