ANDREEV, A., R. RESEL, M.D. SMILGIES, H. HOPPE, G. MATT, H. SITTER, N. S. SARICIFTCI, D. MEISSNER, H. PLANK and O. ZRZAVECKA. Oriented organic semiconductor thin films. Synthetic Metals. Elsevier, 2003, 138/2003, 1-2, p. 59-63. ISSN 0379-6779.
Other formats:   BibTeX LaTeX RIS
Basic information
Original name Oriented organic semiconductor thin films
Name in Czech Orientované organické tenké vrstvy
Authors ANDREEV, A., R. RESEL, M.D. SMILGIES, H. HOPPE, G. MATT, H. SITTER, N. S. SARICIFTCI, D. MEISSNER, H. PLANK and O. ZRZAVECKA.
Edition Synthetic Metals, Elsevier, 2003, 0379-6779.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher France
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 1.303
Organization unit Faculty of Science
UT WoS 000183479200011
Keywords in English Organic epitaxy; Crystalline thin films; Atomic force microscopy; X-ray diffraction
Tags atomic force microscopy, Crystalline thin films, Organic epitaxy, X-ray diffraction
Changed by Changed by: Mgr. Olga Fikarová Zrzavecká, učo 11887. Changed: 14/2/2005 15:30.
Abstract
In this part of our investigations, we mainly use atomic force microscopy to study the growth of para-sexiphenyl (PSP) films on mica. It is shown that self-organization of PSP molecules occurs during the deposition controlled by the substrate temperature and deposition time. In addition, X-ray diffraction (XRD) measurements were performed using synchrotron radiation. They confirmed the very high crystalline quality of the grown films.
Abstract (in Czech)
V této části našeho výzkumu jsme použili ke studiu růstu para-sexiphenylu na slídě především mikroskopii atomove síly (AFM). Ukázalo se samouspořádávání molekul PSP během depozice kontrolované teplotou substrátu a dobou depozice. Dále byla provedena měření rtg difrakce (XRD)s užitím synchrotronového zdroje. Ta potvrdila vysokou kvalitu krystalických vrstev.
PrintDisplayed: 6/10/2024 17:17