| KLANG, Pavel, Václav HOLÝ, Josef KUBĚNA, Richard ŠTOUDEK and Jan ŠIK. X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2005, vol. 2005, No 38, p. A105-A110, 6 pp. ISSN 0022-3727. |
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@article{571023,
author = {Klang, Pavel and Holý, Václav and Kuběna, Josef and Štoudek, Richard and Šik, Jan},
article_location = {Velká Britanie},
article_number = {38},
keywords = {X-ray; diffuse scattering; defects; nitrogen; silicon},
language = {eng},
issn = {0022-3727},
journal = {J. Phys. D: Appl. Phys.},
title = {X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers},
volume = {2005},
year = {2005}
}
TY - JOUR
ID - 571023
AU - Klang, Pavel - Holý, Václav - Kuběna, Josef - Štoudek, Richard - Šik, Jan
PY - 2005
TI - X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers
JF - J. Phys. D: Appl. Phys.
VL - 2005
IS - 38
SP - A105-A110
EP - A105-A110
PB - IOP Publishing Ltd
SN - 00223727
KW - X-ray
KW - diffuse scattering
KW - defects
KW - nitrogen
KW - silicon
N2 - We have studied nitrogen-doped silicon wafers from origin, middle and end of the ingot, annealed at low and high temperatures, using triple-axis high-resolution X-ray diffraction. The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space maps determines the type of dislocation loops and from cross sections we can obtain the radius and concentration of the loops. These parameters were combined with the results from selective etching and infrared absorption spectroscopy method.
ER -
KLANG, Pavel, Václav HOLÝ, Josef KUBĚNA, Richard ŠTOUDEK and Jan ŠIK. X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers. \textit{J. Phys. D: Appl. Phys.}. Velká Britanie: IOP Publishing Ltd, 2005, vol.~2005, No~38, p.~A105-A110, 6 pp. ISSN~0022-3727.
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