LI, J H, D W STOKES, Ondřej CAHA, S L AMMU, J. BAI, K E BASSLER and S C MOSS. Morphological instability in InAs/GaSb superlattices due to interfacial bonds. Physical Review Letters. USA: The Americal Physical Society, 2005, vol. 95, No 9, p. 096104-96107. ISSN 0031-9007.
Other formats:   BibTeX LaTeX RIS
Basic information
Original name Morphological instability in InAs/GaSb superlattices due to interfacial bonds
Name in Czech morfologická nestabita v InAs/GaSb supermřížce díky chemickým vazbám na rozhraní
Authors LI, J H (156 China), D W STOKES (840 United States of America), Ondřej CAHA (203 Czech Republic, guarantor), S L AMMU (840 United States of America), J. BAI (840 United States of America), K E BASSLER (840 United States of America) and S C MOSS (840 United States of America).
Edition Physical Review Letters, USA, The Americal Physical Society, 2005, 0031-9007.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 7.489
RIV identification code RIV/00216224:14310/05:00014235
Organization unit Faculty of Science
UT WoS 000231503600044
Keywords in English STRAINED-LAYER SUPERLATTICES; MOLECULAR-BEAM EPITAXY; SURFACE-DIFFUSION; MU-M; GROWTH; LATTICE
Tags growth, LATTICE, MOLECULAR-BEAM EPITAXY, MU-M, STRAINED-LAYER SUPERLATTICES, SURFACE-DIFFUSION
Tags International impact, Reviewed
Changed by Changed by: Mgr. Ondřej Caha, Ph.D., učo 4414. Changed: 9/2/2007 14:34.
Abstract
Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds.
Abstract (in Czech)
Synchrotronové rtg. záření je použito ke srovnání deformace a složení samouspořádané matrice v InAs/GaSb supermřížce s InSb vazbami na rozhraní a rovinné InAs/GaSb supermřížky s GaAs vazbami na rozhraní.
Links
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
PrintDisplayed: 27/4/2024 12:32