HUMLÍČEK, Josef, Vlastimil KŘÁPEK and Jan FIKAR. Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots. In CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. USA: American Institute of Physics, 2005, p. 753-754. ISBN 0-7354-0257--4. |
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@inproceedings{600185, author = {Humlíček, Josef and Křápek, Vlastimil and Fikar, Jan}, address = {USA}, booktitle = {CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors}, keywords = {quantum dots; photoluminescence}, language = {eng}, location = {USA}, isbn = {0-7354-0257--4}, pages = {753-754}, publisher = {American Institute of Physics}, title = {Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots}, year = {2005} }
TY - JOUR ID - 600185 AU - Humlíček, Josef - Křápek, Vlastimil - Fikar, Jan PY - 2005 TI - Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots PB - American Institute of Physics CY - USA SN - 0735402574 KW - quantum dots KW - photoluminescence N2 - We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response. ER -
HUMLÍČEK, Josef, Vlastimil KŘÁPEK and Jan FIKAR. Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots. In \textit{CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors}. USA: American Institute of Physics, 2005, p.~753-754. ISBN~0-7354-0257--4.
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