NOVÁK, Jiří, Václav HOLÝ, Julian STANGL, Thomas FROMHERZ, Zhong ZHENYANG, Chen GANG, Günther BAUER and Bernd STRUTH. Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction. Journal of Applied Physics. USA: American institute of physics, 2005, vol. 98, No 7, p. 073517-73525. ISSN 0021-8979.
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Basic information
Original name Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
Name in Czech Studium třídimnzionálního krystalu Ge/Si ostrůvků RTG difrakcí
Authors NOVÁK, Jiří (203 Czech Republic, guarantor), Václav HOLÝ (203 Czech Republic), Julian STANGL (40 Austria), Thomas FROMHERZ (40 Austria), Zhong ZHENYANG (156 China), Chen GANG (156 China), Günther BAUER (40 Austria) and Bernd STRUTH (276 Germany).
Edition Journal of Applied Physics, USA, American institute of physics, 2005, 0021-8979.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 2.498
RIV identification code RIV/00216224:14310/05:00014559
Organization unit Faculty of Science
UT WoS 000232558200023
Keywords in English ASSEMBLED GE ISLANDS; QUANTUM DOTS; STRAIN; NANOSTRUCTURES; STACKING; X-RAY DIFFRACTION
Tags ASSEMBLED GE ISLANDS, NANOSTRUCTURES, quantum dots, stacking, STRAIN, X-ray diffraction
Changed by Changed by: prof. RNDr. Václav Holý, CSc., učo 1656. Changed: 12/2/2007 14:17.
Abstract
An analysis of coplanar high-angle x-ray-diffraction data was performed and structural information on buried Ge islands forming a 3D island crystal was obtained. We have demonstrated that the combination of an analytical solution of the equilibrium equations of linear elasticity with kinematical scattering theory can be used to simulate the experimental x-ray-diffraction data. The strain state in the buried islands and their surrounding Si matrix was determined. The Ge content in the islands is found to be on the average 40%, and the island shape does not change dramatically during capping.
Abstract (in Czech)
V článku je prezentována analýza experimentálních dat z měření na tří dimenzionálním krystalu Ge/Si(001) ostrůvků ve vysokoúhlé RTG difrakci. Prokázali jsme, že kombinace analytického řešení rovnic rovnováhy lineární elasticity a teorie kinematického rozptylu mohou být úspěšně použity k simulaci dat z RTG difrakce. Byly získány strukturní vlastnosti Ge ostrůvků, deformace krystalografické mřížky v ostrůvcích a okolní Si matici. Ukázalo se, že po zarostení do Si matice klesla koncentrace Ge v ostrůvcích na 40%, jejich tvar se však výrazně nezměnil.
Links
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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