Detailed Information on Publication Record
2005
High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods
MEDUŇA, Mojmír, Jiří NOVÁK, Claudiu FALUB, Gang CHEN, Günther BAUER et. al.Basic information
Original name
High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods
Name in Czech
Vysokoteplotní studia kaskádových struktur na bázi Si/SiGe za použití metod rtg rozptylu
Authors
MEDUŇA, Mojmír (203 Czech Republic, guarantor), Jiří NOVÁK (203 Czech Republic), Claudiu FALUB (642 Romania), Gang CHEN (156 China), Günther BAUER (40 Austria), Soichiro TSUJINO (392 Japan), Detlev GRÜTZMACHER (276 Germany), Elisabeth MÜLLER (756 Switzerland), Yves CAMPIDELLI (250 France), Olivier KERMARREC (250 France), Daniel BENSAHEL (250 France) and Norbert SCHELL (276 Germany)
Edition
J. Phys. D: Appl. Phys. Bristol, UK, IOP Publishing, Ltd. 2005, 0022-3727
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 1.957
RIV identification code
RIV/00216224:14310/05:00014587
Organization unit
Faculty of Science
UT WoS
000230243500024
Keywords in English
X-ray reflectivity; SiGe; Annealing; Diffusion
Tags
Tags
International impact, Reviewed
Změněno: 14/2/2007 09:39, Mgr. Mojmír Meduňa, Ph.D.
V originále
Temperature stability of SiGe/Si (80% Ge) structures was studied using x-ray reflectivity during in-situ annealing around temperature 790C.
In Czech
Teplotní stabilita SiGe/Si struktur byla studována pomocí rtg reflektivity během žíhání in-situ v okolí teplot 790C.
Links
| MSM 143100002, plan (intention) |
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| MSM0021622410, plan (intention) |
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