MIKULÍK, Petr, D. LÜBBERT, P. PERNOT, L. HELFEN and T. BAUMBACH. Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging. Applied Surface Science. USA: ELSEVIER (NORTH-HOLLAND), 2006, vol. 253, No 1, p. 188-193. ISSN 0169-4332. |
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@article{700659, author = {Mikulík, Petr and Lübbert, D. and Pernot, P. and Helfen, L. and Baumbach, T.}, article_location = {USA}, article_number = {1}, keywords = {X-ray diffraction; X-ray topography; Microdiffraction; Crystal growth; Microstructure; GaAs; GaN}, language = {eng}, issn = {0169-4332}, journal = {Applied Surface Science}, title = {Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging}, url = {http://www.sci.muni.cz/~mikulik/Publications.html#MikulikLubbertPernotHB-ASS-2006}, volume = {253}, year = {2006} }
TY - JOUR ID - 700659 AU - Mikulík, Petr - Lübbert, D. - Pernot, P. - Helfen, L. - Baumbach, T. PY - 2006 TI - Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging JF - Applied Surface Science VL - 253 IS - 1 SP - 188-193 EP - 188-193 PB - ELSEVIER (NORTH-HOLLAND) SN - 01694332 KW - X-ray diffraction KW - X-ray topography KW - Microdiffraction KW - Crystal growth KW - Microstructure KW - GaAs KW - GaN UR - http://www.sci.muni.cz/~mikulik/Publications.html#MikulikLubbertPernotHB-ASS-2006 N2 - Rocking curve imaging is based on measuring a series of Bragg-reflection digital topographs by monochromatic parallel-beam synchrotron radiation in order to quantify local crystal lattice rotations within a large surface area with high angular and high spatial resolution. In this paper we apply the method to map local lattice tilts in two distinct semiconductor sample types with lattice misorientations up to 0.5 deg and with spatial resolution from 30 um down to 1 um. We analyse the measured surface-tilt data volumes for samples with almost smoothly varying specific misoriented defect formation in GaAs wafers and for an inherent subsurface grain structure of epitaxial lateral overgrowth wings in GaN. Back-projected tilt maps and histograms provide both local and global characteristics of the microcrystallinity. ER -
MIKULÍK, Petr, D. LÜBBERT, P. PERNOT, L. HELFEN and T. BAUMBACH. Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging. \textit{Applied Surface Science}. USA: ELSEVIER (NORTH-HOLLAND), 2006, vol.~253, No~1, p.~188-193. ISSN~0169-4332.
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