MEDUŇA, Mojmír, Jiří NOVÁK, Claudiu FALUB, Günther BAUER and Detlev GRÜTZMACHER. High Temperature in-situ Investigation of Si/SiGe Multilayers and Cascade Structures. Materials Structure in Chemistry, Biology, Physics and Technology. Praha, 2005, vol. 12, No 2, p. 126. ISSN 1211-5894.
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Basic information
Original name High Temperature in-situ Investigation of Si/SiGe Multilayers and Cascade Structures
Name in Czech Vysokotepltní studie SiGe-Si kaskádových emitorů v daleké infračervené oblasti
Authors MEDUŇA, Mojmír (203 Czech Republic, guarantor), Jiří NOVÁK (203 Czech Republic), Claudiu FALUB (642 Romania), Günther BAUER (40 Austria) and Detlev GRÜTZMACHER (276 Germany).
Edition Materials Structure in Chemistry, Biology, Physics and Technology, Praha, 2005, 1211-5894.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/05:00020144
Organization unit Faculty of Science
Keywords in English interdiffusion; x-ray diffraction; reflectivity
Tags Interdiffusion, reflectivity, X-ray diffraction
Tags International impact
Changed by Changed by: Mgr. Mojmír Meduňa, Ph.D., učo 7898. Changed: 24/1/2007 14:40.
Abstract
From the temporal evolution of x-ray reflectivity data at high temperature, we obtained an evolution of Si-SiGe interfaces induced by diffusion. The results of our experiment demonstrate that the critical temperature for Ge inter-diffusion process in Si0.7Ge0.3 and Si0.2Ge0.8 depends not only on Ge content but also on the thickness of the individual layers.
Abstract (in Czech)
Z časového vývoje dat rtg reflexe při vysových teplotách jsme získali vývoj Si-SiGe rozhraní indukované difuzí. Výsledky našeho experimentu ukazují, že kritická teplota pro interdifuzní proces Ge v Si0.7Ge0.3 a Si0.2Ge0.8 závisí nejen na obsahu Ge, ale také na tloušťce jednotlivých vrstev.
Links
GP202/05/P286, research and development projectName: Studium morfologie polovodičových multivrstev pomocí rtg rozptylu
Investor: Czech Science Foundation, Investigation of morphology of semiconductor multilayers using x-ray scattering
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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