Další formáty:
BibTeX
LaTeX
RIS
@inproceedings{720672,
author = {Humlíček, Josef and Dubroka, Adam and Maršík, Přemysl and Munzar, Dominik and Boris, A.V. and Bernhard, Christian},
address = {USA},
booktitle = {CP893, Physics of Semiconductors, 28th International Conference},
keywords = {metal-insulator transition; doped silicon; ellipsometry},
language = {eng},
location = {USA},
isbn = {978-0-7354-0397-0},
pages = {33-34},
publisher = {American Institute of Physics},
title = {Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry},
year = {2007}
}
TY - JOUR
ID - 720672
AU - Humlíček, Josef - Dubroka, Adam - Maršík, Přemysl - Munzar, Dominik - Boris, A.V. - Bernhard, Christian
PY - 2007
TI - Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry
PB - American Institute of Physics
CY - USA
SN - 9780735403970
KW - metal-insulator transition
KW - doped silicon
KW - ellipsometry
N2 - We report on far-infrared ellipsometric measurements of Si:P with the phosphorus concentration at the metal-insulator (MI) transition, for temperatures from 15 to 300 K in the 50-600 cm-1 spectral range. Temperature coefficients of the complex conductivity have been measured with high resolution; they reveal a nontrivial evolution of the optical response.
ER -
HUMLÍČEK, Josef, Adam DUBROKA, Přemysl MARŠÍK, Dominik MUNZAR, A.V. BORIS a Christian BERNHARD. Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry. In \textit{CP893, Physics of Semiconductors, 28th International Conference}. USA: American Institute of Physics. s.~33-34. ISBN~978-0-7354-0397-0. 2007.
|
