HUMLÍČEK, Josef, Adam DUBROKA, Přemysl MARŠÍK, Dominik MUNZAR, A.V. BORIS and Christian BERNHARD. Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry. In CP893, Physics of Semiconductors, 28th International Conference. USA: American Institute of Physics, 2007, p. 33-34. ISBN 978-0-7354-0397-0.
Other formats:   BibTeX LaTeX RIS
Basic information
Original name Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry
Name in Czech Frekvenčně a teplotně závislá vodivost na přechodu kov-izolátor v bórem legovaném křemíku studovaná elipsometrií v daleké infračervené oblasti
Authors HUMLÍČEK, Josef (203 Czech Republic, guarantor, belonging to the institution), Adam DUBROKA (203 Czech Republic), Přemysl MARŠÍK (203 Czech Republic, belonging to the institution), Dominik MUNZAR (203 Czech Republic, belonging to the institution), A.V. BORIS (643 Russian Federation) and Christian BERNHARD (276 Germany).
Edition USA, CP893, Physics of Semiconductors, 28th International Conference, p. 33-34, 2 pp. 2007.
Publisher American Institute of Physics
Other information
Original language English
Type of outcome Proceedings paper
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/07:00025614
Organization unit Faculty of Science
ISBN 978-0-7354-0397-0
UT WoS 000246281800016
Keywords in English metal-insulator transition; doped silicon; ellipsometry
Tags doped silicon, ellipsometry, metal-insulator transition
Tags International impact, Reviewed
Changed by Changed by: doc. Mgr. Adam Dubroka, Ph.D., učo 4408. Changed: 7/9/2011 12:10.
Abstract
We report on far-infrared ellipsometric measurements of Si:P with the phosphorus concentration at the metal-insulator (MI) transition, for temperatures from 15 to 300 K in the 50-600 cm-1 spectral range. Temperature coefficients of the complex conductivity have been measured with high resolution; they reveal a nontrivial evolution of the optical response.
Abstract (in Czech)
Referujeme o elipsometrických měřeních v daleké infračervené oblasti na Si:P s koncentrací fosforu na přechodu kov-izolátor, v teplotním oboru od 15 do 300 K. Teplotní koeficienty komplexní vodivosti byly změřeny s vysokým rozlišením; ukazují netriviální vývoj optické odezvy.
Links
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
PrintDisplayed: 1/5/2024 05:04