HUMLÍČEK, Josef, Adam DUBROKA, Přemysl MARŠÍK, Dominik MUNZAR, A.V. BORIS and Christian BERNHARD. Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry. In CP893, Physics of Semiconductors, 28th International Conference. USA: American Institute of Physics, 2007, p. 33-34. ISBN 978-0-7354-0397-0. |
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@inproceedings{720672, author = {Humlíček, Josef and Dubroka, Adam and Maršík, Přemysl and Munzar, Dominik and Boris, A.V. and Bernhard, Christian}, address = {USA}, booktitle = {CP893, Physics of Semiconductors, 28th International Conference}, keywords = {metal-insulator transition; doped silicon; ellipsometry}, language = {eng}, location = {USA}, isbn = {978-0-7354-0397-0}, pages = {33-34}, publisher = {American Institute of Physics}, title = {Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry}, year = {2007} }
TY - JOUR ID - 720672 AU - Humlíček, Josef - Dubroka, Adam - Maršík, Přemysl - Munzar, Dominik - Boris, A.V. - Bernhard, Christian PY - 2007 TI - Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry PB - American Institute of Physics CY - USA SN - 9780735403970 KW - metal-insulator transition KW - doped silicon KW - ellipsometry N2 - We report on far-infrared ellipsometric measurements of Si:P with the phosphorus concentration at the metal-insulator (MI) transition, for temperatures from 15 to 300 K in the 50-600 cm-1 spectral range. Temperature coefficients of the complex conductivity have been measured with high resolution; they reveal a nontrivial evolution of the optical response. ER -
HUMLÍČEK, Josef, Adam DUBROKA, Přemysl MARŠÍK, Dominik MUNZAR, A.V. BORIS and Christian BERNHARD. Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry. In \textit{CP893, Physics of Semiconductors, 28th International Conference}. USA: American Institute of Physics, 2007, p.~33-34. ISBN~978-0-7354-0397-0.
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