| MEDUŇA, Mojmír, Jiří NOVÁK, Günther BAUER, Václav HOLÝ, Claudiu FALUB, Soichiro TSUJINO and Detlev GRÜTZMACHER. In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering. Semicond. Sci. Technol. Velká Britanie: IOP Publishing Ltd, 2007, vol. 22, No 4, p. 447–453. ISSN 0268-1242. |
Other formats:
BibTeX
LaTeX
RIS
@article{720785,
author = {Meduňa, Mojmír and Novák, Jiří and Bauer, Günther and Holý, Václav and Falub, Claudiu and Tsujino, Soichiro and Grützmacher, Detlev},
article_location = {Velká Britanie},
article_number = {4},
keywords = {interdiffusion; x-ray diffraction; reflectivity},
language = {eng},
issn = {0268-1242},
journal = {Semicond. Sci. Technol.},
title = {In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering},
volume = {22},
year = {2007}
}
TY - JOUR
ID - 720785
AU - Meduňa, Mojmír - Novák, Jiří - Bauer, Günther - Holý, Václav - Falub, Claudiu - Tsujino, Soichiro - Grützmacher, Detlev
PY - 2007
TI - In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering
JF - Semicond. Sci. Technol.
VL - 22
IS - 4
SP - 447–453
EP - 447–453
PB - IOP Publishing Ltd
SN - 02681242
KW - interdiffusion
KW - x-ray diffraction
KW - reflectivity
N2 - From the temporal evolution of x-ray reflectivity and diffraction data at high temperature, we obtained an evolution of Si-SiGe interfaces induced by diffusion. The results of our experiment demonstrate that the activation energy and diffusion prefactor depend on Ge content linearly and exponentialy.
ER -
MEDUŇA, Mojmír, Jiří NOVÁK, Günther BAUER, Václav HOLÝ, Claudiu FALUB, Soichiro TSUJINO and Detlev GRÜTZMACHER. In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering. \textit{Semicond. Sci. Technol.}. Velká Britanie: IOP Publishing Ltd, 2007, vol.~22, No~4, p.~447–453. ISSN~0268-1242.
|
