Detailed Information on Publication Record
2008
Optical Property Changes in Low-k Films upon Ultraviolet-Assisted Curing
ESLAVA, Salvador, Guillaume EYMERY, Přemysl MARŠÍK, Francesca IACOPI, Christine KIRSCHHOCK et. al.Basic information
Original name
Optical Property Changes in Low-k Films upon Ultraviolet-Assisted Curing
Name in Czech
Změny optických vlastností low-k filmů v průběhu UV kůry
Authors
ESLAVA, Salvador (724 Spain), Guillaume EYMERY (250 France), Přemysl MARŠÍK (203 Czech Republic, guarantor), Francesca IACOPI (380 Italy), Christine KIRSCHHOCK (56 Belgium), Karen MAEX (56 Belgium), Johan MARTENS (56 Belgium) and Mikhail BAKLANOV (56 Belgium)
Edition
Journal of the electrochemical society, New York, The Electrochemical Society, 2008, 0013-4651
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Belgium
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 2.437
RIV identification code
RIV/00216224:14310/08:00026015
Organization unit
Faculty of Science
UT WoS
000254779700057
Keywords in English
low-k; ellipsometry; UV-cure
Tags
Tags
International impact, Reviewed
Změněno: 9/7/2009 09:58, Mgr. Přemysl Maršík, Ph.D.
V originále
Ultraviolet-assisted curing (UV curing) has been recently applied to enhance the mechanical properties of low-k films. Knowledge about which ultraviolet energies are most effective is still limited and the consequences of applying the UV-curing process to integrated stacks in on-chip interconnects unknown. To clarify these open questions we investigated the optical properties of a SiCOH low-k layer by purged ultraviolet spectroscopic ellipsometry in the energy region 2-9 eV. The complex refractive index of the low-k film shows an absorption edge with a superimposed absorption band at 6.4 eV that vanishes upon ultraviolet-assisted curing. Comparison with Fourier transform infrared transmission demonstrates that the absorption at 6.4 eV must be attributed to the organic porogens, which have also influences on the absorption edge.
In Czech
Ultraviolet-assisted curing (UV curing) has been recently applied to enhance the mechanical properties of low-k films. Knowledge about which ultraviolet energies are most effective is still limited and the consequences of applying the UV-curing process to integrated stacks in on-chip interconnects unknown. To clarify these open questions we investigated the optical properties of a SiCOH low-k layer by purged ultraviolet spectroscopic ellipsometry in the energy region 2-9 eV. The complex refractive index of the low-k film shows an absorption edge with a superimposed absorption band at 6.4 eV that vanishes upon ultraviolet-assisted curing. Comparison with Fourier transform infrared transmission demonstrates that the absorption at 6.4 eV must be attributed to the organic porogens, which have also influences on the absorption edge.
Links
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