ESLAVA, Salvador, Guillaume EYMERY, Přemysl MARŠÍK, Francesca IACOPI, Christine KIRSCHHOCK, Karen MAEX, Johan MARTENS and Mikhail BAKLANOV. Optical Property Changes in Low-k Films upon Ultraviolet-Assisted Curing. Journal of the electrochemical society. New York: The Electrochemical Society, 2008, vol. 155, No 5, p. G115-G120, 6 pp. ISSN 0013-4651.
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Basic information
Original name Optical Property Changes in Low-k Films upon Ultraviolet-Assisted Curing
Name in Czech Změny optických vlastností low-k filmů v průběhu UV kůry
Authors ESLAVA, Salvador (724 Spain), Guillaume EYMERY (250 France), Přemysl MARŠÍK (203 Czech Republic, guarantor), Francesca IACOPI (380 Italy), Christine KIRSCHHOCK (56 Belgium), Karen MAEX (56 Belgium), Johan MARTENS (56 Belgium) and Mikhail BAKLANOV (56 Belgium).
Edition Journal of the electrochemical society, New York, The Electrochemical Society, 2008, 0013-4651.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Belgium
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 2.437
RIV identification code RIV/00216224:14310/08:00026015
Organization unit Faculty of Science
UT WoS 000254779700057
Keywords in English low-k; ellipsometry; UV-cure
Tags ellipsometry, low-k, UV-cure
Tags International impact, Reviewed
Changed by Changed by: Mgr. Přemysl Maršík, Ph.D., učo 13477. Changed: 9/7/2009 09:58.
Abstract
Ultraviolet-assisted curing (UV curing) has been recently applied to enhance the mechanical properties of low-k films. Knowledge about which ultraviolet energies are most effective is still limited and the consequences of applying the UV-curing process to integrated stacks in on-chip interconnects unknown. To clarify these open questions we investigated the optical properties of a SiCOH low-k layer by purged ultraviolet spectroscopic ellipsometry in the energy region 2-9 eV. The complex refractive index of the low-k film shows an absorption edge with a superimposed absorption band at 6.4 eV that vanishes upon ultraviolet-assisted curing. Comparison with Fourier transform infrared transmission demonstrates that the absorption at 6.4 eV must be attributed to the organic porogens, which have also influences on the absorption edge.
Abstract (in Czech)
Ultraviolet-assisted curing (UV curing) has been recently applied to enhance the mechanical properties of low-k films. Knowledge about which ultraviolet energies are most effective is still limited and the consequences of applying the UV-curing process to integrated stacks in on-chip interconnects unknown. To clarify these open questions we investigated the optical properties of a SiCOH low-k layer by purged ultraviolet spectroscopic ellipsometry in the energy region 2-9 eV. The complex refractive index of the low-k film shows an absorption edge with a superimposed absorption band at 6.4 eV that vanishes upon ultraviolet-assisted curing. Comparison with Fourier transform infrared transmission demonstrates that the absorption at 6.4 eV must be attributed to the organic porogens, which have also influences on the absorption edge.
Links
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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